High-Power GaN MESFET on Sapphire Substrate

IEEE Microwave and Guided Wave Letters

Volumn 10, Issue 1, 2000, Pages 19-20

  Gaquiere, C ^a   Trassaert, S ^a   Boudart, B ^a   Crosnier, Y ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

MESFET; microwave power

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE AMPLIFIERS; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM NITRIDE; POWER ADDED EFFICIENCY;

MESFET DEVICES;

EID: 0033709019     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.842074     Document Type: Article

References (5)

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3. G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott, “High power 10 GHz operation of AlGaN HFET's on insulating SiC,” IEEE Electron Device Lett., vol. 19, pp. 198-199, June 1998.
4. Y. F. Wu, B. J. Thibeault, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “3 Watt AlGaN/GaN HEMT's on sapphire substrates with thermal management by flip-chip bonding,” in Proc. DRC, Charlottesville, VA, June 1998, pp. 118-119.
5. S. Trassaert, B. Boudart, C. Gaquiere, D. Theron, Y. Crosnier, F. Huet, and M. A. Poisson, “Trap effects studies in GaN MESFET's by pulsed measurements,” Electron. Lett., vol. 35, no. 16, pp. 1386-1387, Aug. 1999.