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Volumn 13, Issue 6, 2013, Pages 1101-1108

The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range

(3) Korucu, Demet a Turut, Abdulmecit b Altindal, Şemsettin c

a HAKKARI UNIVERSITY (Turkey)

b ISTANBUL MEDENIYET UNIVERSITY (Turkey)

c GAZI UNIVERSITY (Turkey)

Author keywords

Au n GaAs SBDs; Frequency and voltage dependence; NC behavior; Rs

Indexed keywords

CAPACITANCE VOLTAGE; IONIZATION PROCESS; NC BEHAVIOR; NEGATIVE CAPACITANCE; RS; SCHOTTKY BARRIER DIODES (SBDS); VOLTAGE DEPENDENCE; WIDE FREQUENCY RANGE;

CAPACITANCE; GOLD ALLOYS; IMPACT IONIZATION; INTERFACE STATES; PHOTOLITHOGRAPHY; SCHOTTKY BARRIER DIODES;

GALLIUM ARSENIDE;

EID: 84877586185 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2013.03.001 Document Type: Article

Times cited : (36)

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