Negative capacitance of GaAs homojunction far-infrared detectors

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3167-3169

  Perera, A G U ^a   Shen, W Z ^a   Shov, M E ^a   Liu, H C ^b   Buchanan, M ^b   Schaff, W J ^c  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER MOBILITY; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE;

HOMOJUNCTION INTERFACIAL WORK-FUNCTION INTERNAL PHOTOEMISSIONS; NEGATIVE CAPACITANCE BEHAVIORS;

INFRARED DETECTORS;

EID: 0032620508     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124169     Document Type: Article

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