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Volumn 513, Issue , 2012, Pages 107-111

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n- GaAs Schottky barrier diodes and R s effects on the C-V and G/ω-V characteristics

(4) Vural, Özkan a Şafak, Yasemin b Türüt, Abdülmecit c Altindal, Şemsettin b

a AMASYA UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

c ATATÜRK UNIVERSITY (Turkey)

Author keywords

Al rhodamine 101 n GaAs Schottky barrier diodes (SBDs); Intersection behavior of C V T plots; Negative capacitance; Series resistance; Temperature dependence

Indexed keywords

CAPACITANCE VOLTAGE; FORWARD BIAS; FORWARD BIAS VOLTAGE; GAAS; HIGH FREQUENCY; INTERFACE CHARGE; IONIZATION PROCESS; LOW TEMPERATURES; METAL/SEMICONDUCTOR INTERFACE; NEGATIVE CAPACITANCE; SERIES RESISTANCES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

BIAS VOLTAGE; CAPACITANCE; DIODES; ELECTRIC RESISTANCE; GALLIUM ARSENIDE; IMPACT IONIZATION; SEMICONDUCTING GALLIUM;

SCHOTTKY BARRIER DIODES;

EID: 83555173256 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.09.101 Document Type: Article

Times cited : (58)

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