Thermally induced capacitance and electric field domains in GaAs/Al0.3Ga0.7As quantum well infrared photodetector

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 845-850

  Huang, X L ^a   Shin, Y G ^a   Lim, K Y ^a   Suh, E K ^a   Lee, H J ^a   Shen, S C ^b  

^a Chonbuk National University   (South Korea)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CAPACITANCE TEMPERATURE CURVES; ELECTRIC FIELD DOMAINS (EFD);

INFRARED DETECTORS;

EID: 0031164161     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00027-0     Document Type: Article

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