On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique

Science China: Physics, Mechanics and Astronomy

Volumn 55, Issue 9, 2012, Pages 1604-1612

  Korucu, D ^a   Turut, A ^b   Turan, R ^c   Altindal, S ^d  

^a HAKKARI UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^d GAZI UNIVERSITY   (Turkey)

Author keywords

Au p InP SBD; Electrical properties; Frequency dependence; Photolithography; Series resistance; Surface states

Indexed keywords

ACCEPTOR CONCENTRATIONS; APPLIED BIAS VOLTAGE; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CONTINUOUS DISTRIBUTION; DISTRIBUTION PROFILES; ELECTRICAL PARAMETER; FREQUENCY DEPENDENCE; FREQUENCY DEPENDENT; FREQUENCY RANGES; HIGH FREQUENCY; LOW FREQUENCY; REVERSE BIAS; ROOM TEMPERATURE; SERIES RESISTANCES; VOLTAGE RANGES;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; PHOTOLITHOGRAPHY; SURFACE STATES;

BIAS VOLTAGE;

EID: 84866520335     PISSN: 16747348     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11433-012-4761-2     Document Type: Article

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