An instrumental solution to the phenomenon of negative capacitances in semiconductors

Solid-State Electronics

Volumn 39, Issue 3, 1996, Pages 333-336

  Butcher, K S A ^b   Tansley, T L ^b   Alexiev, D ^a  

^a AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD BIASED SCHOTTKY BARRIER; NEGATIVE CAPACITANCE; PARASITIC INDUCTANCE;

CAPACITANCE; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC RESISTANCE; FREQUENCIES; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR DEVICES;

EID: 0030103752     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00143-3     Document Type: Article

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