Frequency and voltage dependence of negative capacitance in Au/SiO 2/n-GaAs structures

Materials Science in Semiconductor Processing

Volumn 15, Issue 1, 2012, Pages 41-46

  Gokcen M ^a   Altuntas H ^b   Altndal, S ^c   Ozcelik S ^c  

^a DUZCE UNIVERSITY   (Turkey)

^b Cankr Karatekin University   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

Au SiO 2 n GaAs structures; Dielectric properties; Frequency dependence; Negative capacitance; Voltage dependence

Indexed keywords

APPLIED BIAS VOLTAGE; CAPACITANCE VOLTAGE; DENSITY DISTRIBUTIONS; DIELECTRIC LOSS TANGENT; ELECTRICAL AND DIELECTRIC PROPERTIES; FORWARD BIAS; FREQUENCY DEPENDENCE; FREQUENCY RANGES; LOW FREQUENCY; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-INSULATOR-SEMICONDUCTORS; MINORITY CARRIER INJECTION; NEGATIVE CAPACITANCE; NEGATIVE VALUES; RELAXATION THEORY; ROOM TEMPERATURE; SERIES RESISTANCES; VOLTAGE DEPENDENCE;

BIAS VOLTAGE; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; GALLIUM ARSENIDE; MIS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

CAPACITANCE;

EID: 84861193174     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.08.001     Document Type: Article

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