The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Altndal, Şemsettin ^a   Uslu, Habibe ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL PARAMETER; FORWARD BIAS; FORWARD BIAS VOLTAGE; FREQUENCY DEPENDENCE; FREQUENCY RANGES; HIGH FREQUENCY; INTERFACE STATE; INTERSECTION POINTS; LOW FREQUENCY; NEGATIVE CAPACITANCE; NEGATIVE VALUES; POSITIVE VOLTAGE; ROOM TEMPERATURE; SERIES RESISTANCES; VOLTAGE RANGES;

CAPACITANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

BIAS VOLTAGE;

EID: 79955403312     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3554479     Document Type: Conference Paper

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