Negative capacitance in light-emitting devices

Solid-State Electronics

Volumn 53, Issue 3, 2009, Pages 324-328

  Zhu, C Y ^a,b   Feng, L F ^b   Wang, C D ^b,c   Cong, H X ^b   Zhang, G Y ^c   Yang, Z J ^c   Chen, Z Z ^c  

^a FOSHAN UNIVERSITY   (China)

^b TIANJIN UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

Admittance measurement; GaN; Laser diode (LD); Light emitting diode (LED); Negative capacitance (NC)

Indexed keywords

CAPACITANCE; CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LADDER NETWORKS; LASERS; LIGHT; LIGHT EMISSION; SEMICONDUCTING GALLIUM;

ADMITTANCE MEASUREMENT; GAN; LASER DIODE (LD); LIGHT-EMITTING DIODE (LED); NEGATIVE CAPACITANCE (NC);

LIGHT EMITTING DIODES;

EID: 61349178825     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.01.002     Document Type: Article

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