Negative capacitance effect in semiconductor devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2196-2206

  Ershov, Maxim ^a   Liu, H C ^a   Li, L ^a   Buchanan, M ^b   Wasilewski, Z R ^b   Jonscher, Andrew K ^c  

^a UNIVERSITY OF AIZU   (Japan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; PHOTODETECTORS; SEMICONDUCTOR QUANTUM WELLS; TIME DOMAIN ANALYSIS;

NEGATIVE CAPACITANCE (NC) EFFECTS;

SEMICONDUCTOR DEVICE TESTING;

EID: 0032188634     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725254     Document Type: Article

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