IGBT negative gate capacitance and related instability effects

IEEE Electron Device Letters

Volumn 18, Issue 12, 1997, Pages 622-624

  Omura, I ^a,b   Ohashi, H ^b   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE TO EMITTER VOLTAGE; INSULATED GATE BIPOLAR TRANSISTORS; NEGATIVE GATE CAPACITANCE;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CURRENT DISTRIBUTION; ELECTRODES; GATES (TRANSISTOR); MOSFET DEVICES; VOLTAGE MEASUREMENT;

BIPOLAR TRANSISTORS;

EID: 0031333122     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.644090     Document Type: Article

References (6)

1. J. Yamashita, H. Haruguchi, and H. Hagino, "A study on the IGBT's turn-off failure and inhomogeneous operation," in Proc. ISPSD'94, 1994, pp. 45-50.
2. K. Lilja and W. Fichtner, "A filamentation-free insulated-gate controlled thyristor and comparisons to the IGBT," in Proc. ISPSD'96, 1996, pp. 275-278.
3. Toshiba Data Book IGBT, Toshiba Corp, p. 46, 1995.
4. ISE Integrated Systems Engineering AG, DESSIS-Reference Manual, 1994.
5. H. Brunner, M. Bruckmann, M. Hierholzer, T. Laska, and A. Porst, "Improved 3.5 kV IGBT-diode chipset and 800 A module applications," in Proc. PESC'96, 1996, pp. 1748-1753.
6. M. Kitagawa, I. Omura, S. Hasegawa, T. Inoue, and A. Nakagawa, "A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) in a mode similar to a thyristor," in IEDM Tech. Dig., 1993, pp. 679-682.