Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors

Solid-State Electronics

Volumn 50, Issue 3, 2006, Pages 367-371

  Gharbi, R ^a   Abdelkrim, M ^a   Fathallah, M ^a   Tresso, E ^b   Ferrero, S ^b   Pirri, C F ^b   Brahim, T Mohamed ^c  

^a UNIVERSITY OF TUNIS   (Tunisia)

^b POLITECNICO DI TORINO   (Italy)

^c UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Amorphous silicon; Electrical properties; Negative capacity; UV photodetectors

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; ELECTRIC PROPERTIES; LIGHT; PHOTOCURRENTS; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SPECTRUM ANALYSIS; ULTRAHIGH VACUUM;

CAPACITIVE SHIFTS; NEGATIVE CAPACITY; PHOTON FLUXES;

ULTRAVIOLET DETECTORS;

EID: 33748641542     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.02.009     Document Type: Article

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