Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 81, Issue 5, 2001, Pages 453-460

  Mohammad, S Noor ^a   Fan, Z F ^b   Botchkarev, A E ^a   Kim, W ^c   Aktas, O ^b   Morkoc H ^d   Shiwei, F ^a   Jones, K A ^e   Derenge, M A ^e  

^a School of Engineering   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d Virginia Commonwealth University   (United States)

^e U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18744377156     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642810011035528     Document Type: Article

References (18)