Negative capacitance in semiconductor structures

Semiconductors

Volumn 30, Issue 4, 1996, Pages 340-343

  Penin, N A ^a  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000544293     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. J. Werner, A. Levi, R. T. Tung, M. Anzlowar, and M. Pinto, Phys. Rev. Lett. 60, 53 (1988).
2. X. Wu, E. S. Yang, and H. L. Evans, J. Appl. Phys. 68, 2845 (1990).
3. K. Steiner, N. Uchitami, and N. Toyoda, J. Vac. Sci. Technol. B 8, 1113 (1990).
4. S. H. Zoidi and A. K. Jonsher, Semicond. Sci. Technol. 2 , 587 (1987).
5. A. P. Boltaev, T. M. Burbaev, G. A. Kalyuzhnaya, V. A. Kurbatov, and N. A. Penin, Fiz. Tekh. Poluprovodn. 28, 1569 (1994) [Semiconductors 28, 876 (1994)].
6. A. P. Boltaev, T. M. Burbaev, G. A. Kalyuzhnaya, V. A. Kurbatov, and N. A. Penin, Fiz. Tekh. Poluprovodn. 28, 1569 (1994) [Semiconductors 28, 876 (1994)].
7. M. Beale and P. MacKay, Phil. Mag. B 65, 47 (1992).
8. M. Beale, Phil. Mag. B 65, 65 (1992).
9. N. A. Penin, Fiz. Tekh. Poluprovodn. 23, 466 (1989) [Sov. Phys. Semicond. 23, 291 (1989)].
10. N. A. Penin, Fiz. Tekh. Poluprovodn. 23, 466 (1989) [Sov. Phys. Semicond. 23, 291 (1989)].