Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K

Materials Science in Semiconductor Processing

Volumn 15, Issue 5, 2012, Pages 480-485

  Korucu, D ^a   Efeoglu, H ^b   Turut, A ^b,c   Altindal, S ^d  

^a HAKKARI UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

^c ISTANBUL MEDENIYET UNIVERSITY   (Turkey)

^d GAZI UNIVERSITY   (Turkey)

Author keywords

Barrier height; Effective barrier height; Flat band barrier height; Ideality factor; Photolithography; Schottky barrier inhomogeneity; Temperature dependence; To anomaly

Indexed keywords

BARRIER HEIGHTS; FLAT BAND; IDEALITY FACTORS; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENCE; TO ANOMALY;

GALLIUM ARSENIDE; GOLD ALLOYS; PHOTOLITHOGRAPHY; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 84863783501     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.03.005     Document Type: Article

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