Nanoscale electrical and structural characterization of gold/alkyl monolayer/silicon diode junctions

Journal of Physical Chemistry C

Volumn 112, Issue 24, 2008, Pages 9081-9088

  Kuikka, Marcus A ^a   Li, Wenjie ^a   Kavanagh, Karen L ^a   Yu, Hua Zhong ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYLATION; DIODES; ELECTRON ENERGY LEVELS; FABRICS; GOLD; MICROSCOPIC EXAMINATION; MONOLAYERS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ALKYL CHAIN LENGTHS; ALKYL MONOLAYERS; BARRIER HEIGHTS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DIODE JUNCTIONS; END GROUPS; GOLD ATOMS; GOLD CONTACTS; IDEALITY FACTORS; MACRO SCALES; MOLECULAR LAYERS; MOLECULAR MODIFICATIONS; NANO SCALING; NANOSCALE LEVELS; NM RESOLUTION; ORGANIC MONOLAYERS; SILICON DIODES; STRUCTURAL CHARACTERIZATIONS; STRUCTURAL MEASUREMENTS;

CRYSTAL ATOMIC STRUCTURE;

EID: 52649083451     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp802685j     Document Type: Article

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