Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1099-1103

  Misiakos, K ^a   Tsamakis, D ^b   Tsoi, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CRYOGENICS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; IONIZATION OF SOLIDS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES;

ANOMALOUS DYNAMIC RESPONSES; CRYOGENIC TEMPERATURES;

SEMICONDUCTOR DIODES;

EID: 0031207898     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00060-9     Document Type: Article

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