Negative terminal capacitance of light emitting diodes at alternating current (AC) biases

IEEE Journal of Quantum Electronics

Volumn 46, Issue 7, 2010, Pages 1072-1075

  Feng, L F ^a   Li, Y ^a   Zhu, C Y ^b   Cong, H X ^c   Wang, C D ^a,d  

^a TIANJIN UNIVERSITY   (China)

^b FOSHAN UNIVERSITY   (China)

^c NANKAI UNIVERSITY   (China)

^d PEKING UNIVERSITY   (China)

Author keywords

Capacitance measurement; Current density; Light emitting diodes; P n junction

Indexed keywords

ALTERNATING CURRENT; APPLIED VOLTAGES; DIFFUSION CAPACITANCE; DIRECT CURRENT; FORWARD BIAS; NEGATIVE CAPACITANCE; P-N JUNCTION; SMALL SIGNAL;

CAPACITANCE; CAPACITANCE MEASUREMENT; DIODES; LIGHT EMISSION; LITHIUM BATTERIES; SEMICONDUCTOR JUNCTIONS;

LIGHT EMITTING DIODES;

EID: 77950543786     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2043337     Document Type: Article

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