Origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-InP Schottky Barier Diodes (SBDs)

Journal of Optoelectronics and Advanced Materials

Volumn 11, Issue 2, 2009, Pages 192-196

  Korucu, D ^a   Altindal, S ^a   Mammadov, T S ^a,b   Ozcelik S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

Anomalous capacitance peaks; Au n InP SBD; Corrected C and G w; Negative capacitance; Temperature dependence

Indexed keywords

BIAS VOLTAGE; CHARGE CARRIERS; ELECTRIC RESISTANCE; GOLD COMPOUNDS; INDIUM COMPOUNDS; INTERFACE STATES; TEMPERATURE DISTRIBUTION;

ANOMALOUS CAPACITANCE PEAKS; CAPACITANCE VOLTAGE; CORRECTED C AND G/W; INCREASING TEMPERATURES; MINORITY CARRIER INJECTION; NEGATIVE CAPACITANCE; PHYSICAL PRINCIPLES; TEMPERATURE DEPENDENCE;

CAPACITANCE;

EID: 75949127656     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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