Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure

Microelectronic Engineering

Volumn 87, Issue 2, 2010, Pages 108-116

  Kavasoglu, A Sertap ^a   Kavasoglu, Nese ^a   Kodolbas, A Osman ^b   Birgi, Ozcan ^a   Oktu, Ozcan ^c   Oktik, Sener ^a  

^a MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

^b NATIONAL METROLOGY INSTITUTE   (Turkey)

^c HACETTEPE UNIVERSITY   (Turkey)

Author keywords

C V and G V characteristics; Helium dilution; Hydrogenated amorphous silicon (a Si:H); Interface states; Negative capacitance (NC); Series resistance

Indexed keywords

HELIUM DILUTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTERFACE STATE; NEGATIVE CAPACITANCE; SERIES RESISTANCES;

CAPACITANCE; HELIUM; HYDROGENATION; RADIOACTIVITY;

AMORPHOUS SILICON;

EID: 70450231743     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.06.001     Document Type: Article

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