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Volumn 381, Issue 1-2, 2006, Pages 199-203

The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes

Author keywords

Current voltage; Interface state density distributions; Metal semiconductor structures; Schottky barrier diodes

Indexed keywords

ELECTRIC POTENTIAL; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS;

EID: 33747728852     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.01.412     Document Type: Article
Times cited : (62)

References (28)
  • 6
    • 33747632439 scopus 로고    scopus 로고
    • M. Okutan, E.N. Basaran, F. Yakuphanoglu, Appl. Surf. Sci. (2005) in press.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.