Transparent conducting oxides: Electronic structure-property relationship from photoelectron spectroscopy with in situ sample preparation

Journal of the American Ceramic Society

Volumn 96, Issue 2, 2013, Pages 331-345

  Klein, Andreas ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT PROPERTY; ELECTRICAL CONDUCTIVITY; ELECTRONIC DEVICE; ELECTRONIC SURFACE; ENERGY-BAND ALIGNMENT; FUTURE APPLICATIONS; LOW-EMISSIVITY COATING; MATERIAL PROPERTY; OXIDE SEMICONDUCTOR; P-TYPE; POLYCRYSTALLINE; SAMPLE PREPARATION; STRUCTURE PROPERTY RELATIONSHIPS; SURFACE BAND BENDING; SURFACES AND INTERFACES; THEORETICAL STUDY; TRANSPARENT CONDUCTING OXIDE; TRANSPARENT CONDUCTORS; TRANSPARENT THIN FILM;

ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; FLAT PANEL DISPLAYS; INTERFACES (MATERIALS); IONIZATION POTENTIAL; PHOTOELECTRON SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SURFACE PROPERTIES;

AMORPHOUS MATERIALS;

EID: 84873746853     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12143     Document Type: Article

References (160)

1. D.S. Ginley, and, C. Bright, " Transparent Conducting Oxides," MRS Bull., 25 [8] 15-18 (2000).
2. C.G. Granqvist, " Transparent Conductors as Solar Energy Materials: A Panoramic Review," Sol. Energy Mat. Sol. Cells, 91, 1529-98 (2007).
3. E. Fortunato, D. Ginley, H. Hosono, and, D.C. Paine, " Transparent Conducting Oxides for Photovoltaics," MRS Bull., 32, 242-7 (2007).
4. K. Ellmer, A. Klein, and, B. Rech, (ed), Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells, Springer-Verlag, Berlin-Heidelberg, 2008.
5. D.S. Ginley, H. Hosono, and, D.C. Paine, (ed), Handbook of Transparent Conductors. Springer, New York, 2010.
6. A. Facchetti, and, T.J. Marks, (ed), Transparent Oxide Semiconductors: Fundamentals and Recent Progress. John Wiley & Sons Ltd, Chichester, 2010.
7. J.F. Wager, D.A. Keszler, and, R.E. Presley, Transparent Electronics. Springer, New York, 2008.
8. T. Kamiya, K. Nomura, and, H. Hosono, " Present Status of Amorphous In-Ga-Zn-O Thin-Film Transistors," Sci. Technol. Adv. Mater., 11, 044305, 23pp (2010).
9. E. Fortunato, P. Barquinha, and, R. Martins, " Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances," Adv. Mater., 24, 2945-86 (2012).
10. R. Martins, E. Fortunato, P. Barquinha, and, L. Pereira, Transparent Electronics: From Materials to Devices. John Wiley & Sons, Chichester, 2012.
11. T.P. Tyler, R.E. Brock, H.J. Karmel, T.J. Marks, and, M.C. Hersam, " Electronically Monodisperse Single-Walled Carbon Nanotube Thin Films as Transparent Conducting Anodes in Organic Photovoltaic Devices," Adv. Energy Mater., 1, 785-91 (2011).
12. S. Bae, H. Kim, Y. Lee, X. Xu, J.-S. Park, Y. Zheng, and, J. Balakrishnan, " Roll-to-Roll Production of 30-Inch Graphene Films for Transparent Electrodes," Nat. Nanotechnol., 5, 574-8 (2010).
13. L.S. Hung, and, C.H. Chen, " Recent Progress in Molecular Organic Electroluminescent Materials and Devices," Mater. Sci. Eng., R, 39, 143-222 (2002).
14. F. So, J. Kido, and, P. Burrows, " Organic Light-Emitting Devices for Solid-State Lighting," MRS Bull., 33, 663-9 (2008).
15. T. Minami, " Transparent Conducting Oxide Semiconductors for Transparent Electrodes," Semicond. Sci. Technol., 20, S35-44 (2005).
16. T. Kugler, W.R. Salaneck, H. Rost, and, A.B. Holmes, " Polymer Band Alignment at the Interface with Indium Tin Oxide: Consequences for Light Emitting Diodes," Chem. Phys. Lett., 310, 391-6 (1999).
17. Y. Gassenbauer, and, A. Klein, " Electronic and Chemical Properties of ITO Surfaces and ITO/ZnPc Interfaces Studied in-situ by Photoelectron Spectroscopy," J. Phys. Chem. B, 110, 4793-801 (2006).
18. 3 Films: Basic Optical Properties and Applications to Energy-Efficient Windows," J. Appl. Phys., 60, R123-59 (1986).
19. T.J. Coutts, D. L. Young, and, X. Li, " Characterization of Transparent Conducting Oxides," MRS Bull., 25 [ 8 ] 58-65 (2000).
20. 3 by Hard X-ray Photoemission Spectroscopy," Phys. Rev. B, 81, 165207, 9pp (2010).
21. 2," J. Electr. Spectr. Rel. Phen., 128, 59-66 (2003).
22. A.J. Freeman, K.R. Poeppelmeier, T.O. Mason, R.P.H. Chang, and, A.T.J. Marks, " Chemical and Thin-Film Strategies for New Transparent Conducting Oxides," MRS Bull., 25 [ 8 ] 45-51 (2000).
23. 2," Nature, 389, 939-42 (1997).
24. 2 with Delafossite Structure," Appl. Phys. Lett., 78, 1583-5 (2001).
25. K. Ueda, S. Inoue, S. Hirose, H. Kawazoe, and, H. Hosono, " Transparent p-Type Semiconductor: LaCuOS Layered Oxysulfide," Appl. Phys. Lett., 77, 2701-3 (2000).
26. H. Yanagi, J. Tate, S. Park, C.-H. Park, D.A. Keszler, M. Hirano, and, H. Hosono, " Valence Band Structure of BaCuSF and BaCuSeF," J. Appl. Phys., 100, 083705, 5pp (2006).
27. 2: A p-Type Conductive Oxide with Wide Band Gap," Appl. Phys. Lett., 73, 220-2 (1998).
28. J.D. Perkins, T.R. Paudel, A. Zakutayev, P.F. Ndione, P.A. Parilla, D.L. Young, S. Lany, D.S. Ginley, A. Zunger, N.H. Perry, Y. Tang, M. Grayson, T.O. Mason, J.S. Bettinger, Y. Shi, and, M.F. Toney, " Inverse Design Approach to Hole Doping in Ternary Oxides: Enhancing p-Type Conductivity in Cobalt Oxide Spinels," Phys. Rev. B, 84, 205207, 8pp (2011).
29. H. Ohta, K. Nomura, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and, H. Hosono, " Frontier of Transparent Oxide Semiconductors," Solid-State Electron., 47, 2261-7 (2003).
30. 4, a p-Type Transparent Oxide Semiconductor in the Class of Spinel Zinc-d6-Transition Metal Oxide," Appl. Phys. Lett., 90, 021903, 3pp (2007).
31. III = Co, Rh, Ir) Spinels," Phys. Chem. Chem. Phys., 13, 9667-75 (2011).
32. 3: A p-Type Transparent Conducting Oxide," Appl. Phys. Lett., 99, 111910, 3pp (2011).
33. 3 Interface: Energy Band Alignment and its Relation to the Limits of Fermi Level Variation," Phys. Rev. B, 84, 045317, 7pp (2011).
34. S. Lany, and, A. Zunger, " Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides," Phys. Rev. Lett., 98, 045501, 4pp (2007).
35. 2: A Theoretical Approach by First-Principles Calculations Using Hybrid-Functional Methodology," J. Appl. Phys., 108, 053511, 6pp (2010).
36. J. Robertson, and, S.J. Clark, " Limits to Doping in Oxides," Phys. Rev. B, 83, 075205, 7pp (2011).
37. A. Luque, and, S. Hegedus, (ed), Handbook of Photovoltaic Science and Engineering. John Wiley & Sons, Chichester, 2003.
38. M. Gloeckler, A.L. Fahrenbruch, and, J.R. Sites, " Numerical Modelling of CIGS and CdTe Solar Cells: Setting the Baseline "; pp. 2 in Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Vol.1, WCPEC-3 Organizing Committee, Osaka, 2003.
39. R. Scheer, and, H.-W. Schock, Chalcogenide Photovoltaics: Physics, Technologies, and Thin Film Devices. Wiley-VCH, Weinheim, 2011.
40. J. Fritsche, D. Kraft, A. Thißen, T. Mayer, A. Klein, and, W. Jaegermann, " Band Energy Diagram of CdTe Thin Film Solar Cells," Thin Solid Films, 403-404, 252-7 (2002).
41. 2 Heterojunction Solar Cells-Recent Achievements, Current Understanding, and Future Challenges," Appl. Phys. A, 69, 131-47 (1999).
42. U. Rau, P.O. Grabitz, and, J.H. Werner, " Resistive Limitations to Spatially Inhomogeneous Electronic Losses in Solar Cells," Appl. Phys. Lett., 85, 6010-2 (2004).
43. C.S. Ferekides, R. Mamazza, U. Balasubramanian, and, D.L. Morel, " Transparent Conductors and Buffer Layers for CdTe Solar Cells," Thin Solid Films, 480-481, 224-9 (2005).
44. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and, H. Hosono, " Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors," Nature, 432, 488-92 (2004).
45. H.Q. Chiang, J.F. Wager, R.L. Hoffman, J. Jeong, and, D.A. Keszler, " High Mobility Transparent Thin-Film Transistors with Amorphous Zinc tin Oxide Channel Layer," Appl. Phys. Lett., 86, 013503, 3pp (2005).
46. N.L. Dehuff, E.S. Kettenring, D. Hong, H.Q. Chiang, J.F. Wager, R.L. Hoffman, C.-H. Park, and, D.A. Keszler, " Transparent Thin-Film Transistors with Zinc Indium Oxide Channel Layer," J. Appl. Phys., 97, 064505, 5pp (2005).
47. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and, H. Hosono, " P-Channel Thin-Film Transistor Using p-Type Oxide Semiconductor, SnO," Appl. Phys. Lett., 93, 032113, 3pp (2008).
48. J.C. Park, S. Kim, S. Kim, C. Kim, I. Song, Y. Park, U.-I. Jung, D.H. Kim, and, J.-S. Lee, " Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers," Adv. Mater., 22, 5512-6 (2010).
49. N. Yamazoe, G. Sakai, and, K. Shimanoe, " Oxide Semiconductor Gas Sensors," Catal. Surv. Asia, 7, 63-75 (2003).
50. D. Briggs, and, M.P. Seah, Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy. John Wiley & Sons, New York 1983.
51. S. Hüfner, Photoelectron Spectroscopy. Springer-Verlag, Berlin, 1995.
52. A. Klein, T. Mayer, A. Thissen, and, W. Jaegermann, " Photoelectron Spectroscopy in Materials Science and Physical Chemistry: Analysis of Composition, Chemical Bonding and Electronic Structure of Surfaces and Interfaces "; pp. 477-512 in Methods in Physical Chemistry, Edited by, R. Schäfer, and, P. C. Schmidt,. Wiley-VCH, Weinheim, 2012
53. E.A. Kraut, R.W. Grant, J.R. Waldrop, and, S.P. Kowalczyk, " Semiconductor Core-Level to Valence-Band Maximum Binding-Energy Differences: Precise Determination by X-ray Photoelectron Spectroscopy," Phys. Rev. B, 28, 1965-77 (1983).
54. A. Schleife, J.B. Varley, F. Fuchs, C. Rödl, F. Bechstedt, P. Rinke, A. Janotti, and, C.G. Van de Walle, " Tin Dioxide from First Principles: Quasiparticle Electronic States and Optical Properties," Phys. Rev. B, 83, 035116, 9pp (2011).
55. 3(001)," Surf. Sci., 554, 81-9 (2004).
56. 3," Phys. Rev. B, 79, 205211, 10pp (2009).
57. 2 Single Crystals," Appl. Phys. Lett., 70, 1299-301 (1997).
58. J.R. Waldrop, R.W. Grant, S.P. Kowalczyk, and, E.A. Kraut, " Measurement of Semiconductor Heterojunction Band Discontinuities by X-ray Photoemission Spectroscopy," J. Vac. Sci. Technol., A, 3, 835-41 (1985).
59. G. Venkata Rao, F. Säuberlich, and, A. Klein, " Influence of Mg Content on the Band Alignment at CdS/(Zn,Mg)O Interfaces," Appl. Phys. Lett., 87, 032101, 3pp (2005).
60. A. Klein, " Energy Band Alignment at Interfaces of Semiconducting Oxides: A Review of Experimental Determination Using Photoelectron Spectroscopy and Comparison with Theoretical Predictions by the Electron Affinity Rule, Charge Neutrality Levels, and the Common Anion Rule," Thin Solid Films, 520, 3721-8 (2012).
61. M. Ohring, The Materials Science of Thin Films. Academic Press, San Diego, 1992.
62. 2O on Semiconductors ";pp. 226-298 in Landolt-Börnstein. Vol. III/42a (4), Edited by, H. P. Bonzel, Springer-Verlag, Berlin-Heidelberg, 2005
63. K. Ellmer, " Magnetron Sputtering of Transparent Conductive Zinc Oxide: Relation Between the Sputtering Parameters and the Electronic Properties," J. Phys. D: Appl. Phys., 33, R17-32 (2000).
64. H.L. Hartnagel, A.L. Dawar, A.K. Jain, and, C. Jagadish, Semiconducting Transparent Thin Films. Institute of Physics Publishing, Bristol, 1995.
65. K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and, H. Hosono, " Subgap States in Transparent Amorphous Oxide Semiconductor, In-Ga-Zn-O, Observed by Bulk Sensitive X-ray Photoelectron Spectroscopy," Appl. Phys. Lett., 92, 202117, 3pp (2008).
66. K. Nomura, T. Kamiya, E. Ikenaga, H. Yanagi, K. Kobayashi, and, H. Hosono, " Depth Analysis of Subgap Electronic States in Amorphous Oxide Semiconductor, a-In-Ga-Zn-O, Studied by Hard X-ray Photoelectron Spectroscopy," J. Appl. Phys., 109, 073726, 8pp (2011).
67. 3 Revealed by First-Principles Calculations and X-ray Spectroscopy," Phys. Rev. Lett., 100, 167402, 4pp (2008).
68. G. Frank, and, H. Köstlin, " Electrical Properties and Defect Model of Tin-Doped Indium Oxide Layers," Appl. Phys. A, 27, 197-206 (1982).
69. G.B. González, T.O. Mason, J.P. Quintana, O. Warschkow, D.E. Ellis, J.-H. Hwang, and, J.P. Hodges, " Defect Structure Studies of Bulk and Nano-Indium-tin Oxide," J. Appl. Phys., 96, 3912-20 (2004).
70. 119Sn Mössbauer Spectroscopy and Hall Effect Measurements," Jpn. J. Appl. Phys., 39, 4158-63 (2000).
71. S.P. Harvey, T.O. Mason, Y. Gassenbauer, R. Schafranek, and, A. Klein, " Surface vs. Bulk Electronic/Defect Structures of Transparent Conducting Oxides. Part I. Indium Oxide and ITO," J. Phys. D: Appl. Phys., 39, 3959-68 (2006).
72. 3," Phys. Rev. B, 73, 245312, 11pp (2006).
73. 2 Thin Films," Sensors and Actuators B, 139, 665-72 (2009).
74. A. Klein, C. Körber, A. Wachau, F. Säuberlich, Y. Gassenbauer, R. Schafranek, S.P. Harvey, and, T.O. Mason, " Surface Potentials of Magnetron Sputtered Transparent Conducting Oxides," Thin Solid Films, 518, 1197-203 (2009).
75. A. Klein, and, F. Säuberlich, " Surfaces and Interfaces of Sputter-Deposited ZnO Films "; pp. 125-85 in: Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells, Edited by, K. Ellmer, A. Klein, and, B. Rech,. Springer-Verlag, Berlin, 2008
76. 3:Sn," Solid State Ionics, 173, 141-5 (2004).
77. S.B. Zhang, and, J.E. Northrup, " Chemical Potential Dependence of Defect Formation Energies in GaAs: Application to Ga Self-Diffusion," Phys. Rev. Lett., 67, 2339-42 (1991).
78. W. Walukiewicz, " Intrinsic Limitations to the Doping of Wide-Gap Semiconductors," Phys. B, 302-303, 123-34 (2001).
79. 2 Compounds," J. Appl. Phys., 83, 3192-6 (1998).
80. P. Ágoston, P. Erhart, A. Klein, and, K. Albe, " Geometry, Electronic Structure and Thermodynamic Stability of Intrinsic Point Defects in Indium Oxide," J. Phys.: Cond. Mat., 21, 455801, 11pp (2009).
81. P. Erhart, A. Klein, and, K. Albe, " First-Principles Study on the Structure and Stability of Oxygen Related Point Defects in Zinc Oxide," Phys. Rev. B, 72, 085213, 7pp (2005).
82. P. Erhart, and, K. Albe, " First-Principles Study of Migration Mechanisms and Diffusion of Oxygen in Zinc Oxide," Phys. Rev. B, 73, 115207, 9pp (2006).
83. P. Ágoston, and, K. Albe, " Ab Initio Modeling of Diffusion in Indium Oxide," Phys. Rev. B, 81, 195205, 11pp (2010).
84. P. Erhart, K. Albe, and, A. Klein, " First-Principles Study of Intrinsic Point Defects in ZnO: Role of Band Structure, Volume Relaxation, and Finite-Size Effects," Phys. Rev. B, 73, 205203, 9pp (2006).
85. 2 Thin Films Prepared by the Metal-Organic Chemical-Vapor Deposition Method," Appl. Phys. Lett., 78, 350-2 (2001).
86. 2 Seed Layers," Appl. Phys. Express, 3, 031102, 3pp (2010).
87. H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe, and, H. Hosono, " Highly Electrically Conductive Indium-Tin-Oxide Thin Films Epitaxially Grown on Yttria-Stabilized Zirconia (100) by Pulsed-Laser Deposition," Appl. Phys. Lett., 76, 2740-2 (2000).
88. P.A. Cox, R.G. Egdell, C. Harding, W.R. Patterson, and, P.J. Taverner, " Surface Properties of Antimony Doped Tin(IV) Oxide: A Study by Electron Spectroscopy," Surf. Sci., 123, 179-203 (1982).
89. I. Sieber, N. Wanderka, I. Urban, I. Dörfel, E. Schierhorn, F. Fenske, and, W. Fuhs, " Electron Microscopic Characterization of Reactively Sputtered ZnO Films with Different Al-Doping Levels," Thin Solid Films, 330, 108-13 (1998).
90. A. Zunger, " Practical Doping Principles," Appl. Phys. Lett., 83, 57-9 (2003).
91. S.B. Zhang, S.-H. Wei, and, A. Zunger, " Intrinsic n-Type Versus p-Type Doping Asymmetry and the Defect Physics of ZnO," Phys. Rev. B, 63, 075205, 7pp (2001).
92. V.E. Henrich, and, P.A. Cox, The Surface Science of Metal Oxides. Cambridge University Press, Cambridge, 1994.
93. J. Goniakowski, F. Finocchi, and, C. Noguera, " Polarity of Oxide Surfaces and Nanostructures," Rep. Prog. Phys., 71, 016501, 55pp (2008).
94. 3(111) (1 × 1) Determined by Density Functional Theory Calculations and Low Energy Electron Diffraction," Surf. Sci., 606, 1-6 (2012).
95. K.W. Haberern, and, M.D. Pashley, " GaAs(111) A-(2x2) Reconstruction Studied by Scanning Tunneling Microscopy," Phys. Rev. B, 41, 3226-9 (1990).
96. G. Kresse, O. Dulub, and, U. Diebold, " Competing Stabilization Mechanism for the Polar ZnO(0001)-Zn Surface," Phys. Rev. B, 68, 245409, 15pp (2003).
97. O. Dulub, U. Diebold, and, G. Kresse, " Novel Stabilization Mechanism on Polar Surfaces: ZnO(0001)-Zn," Phys. Rev. Lett., 90, 016102, 4pp (2003).
98. U. Diebold, L.V. Koplitz, and, O. Dulub, " Atomic-Scale Properties of Low-Index ZnO Surfaces," Appl. Surf. Sci., 237, 336-42 (2004).
99. M. Kunat, S.G. Girol, T. Becker, U. Burghaus, and, C. Wöll, " Stability of the Polar Surfaces of ZnO: A Reinvestigation Using He-Atom Scattering," Phys. Rev. B, 66, 081402 (R), 3pp (2002).
100. V. Staemmler, K. Fink, B. Meyer, D. Marx, M. Kunat, S.G. Girol, U. Burghaus, and, C. Wöll, " Stabilization of Polar ZnO Surfaces:Validating Microscopic Models by Using CO as a Probe Molecule," Phys. Rev. Lett., 90, 106102, 4pp (2003).
101. 2 (110), (100), and (101) Single-Crystal Surfaces: Structure, Composition, and Electronic Properties," Phys. Rev. B, 72, 165414, 20pp (2005).
102. M. Batzill, and, U. Diebold, " The Surface and Materials Science of Tin Oxide," Progr. Surf. Sci., 79, 47-154 (2005).
103. 2-(110) Surface," Surf. Sci., 605, 714-22 (2011).
104. 3 Nanostructures on Cubic Zirconia," Nano Lett., 10, 3740-6 (2010).
105. 3 Surfaces," Phys. Rev. B, 84, 045311, 20pp (2011).
106. 3: A Natural Source for Inhomogeneous Barrier Formation at Electrode Interfaces in Organic Electronics," J. Phys.: Cond. Mat., 23, 334203, 8pp (2011).
107. A. Walsh, and, C.R.A. Catlow, " Structure, Stability and Work Functions of the Low Index Surfaces of Pure Indium Oxide and Sn-Doped Indium Oxide (ITO) from Density Functional Theory," J. Mater. Chem., 20, 10438-44 (2010).
108. 3(001) Single Crystals," Phys. Rev. B, 85, 115441, 11pp (2012).
109. 3 (111) Thin Films by STM," New J. Phys., 10, 125030, 11pp (2008).
110. U. Diebold, " The Surface Science of Titanium Dioxide," Surf. Sci. Rep., 48, 53-229 (2003).
111. C. Noguera, " Polar Oxide Surfaces," J. Phys.: Cond. Mat., 12, R367-410 (2000).
112. 3 (001) and (011) Surfaces," Phys. Rev., B, 77, 195408, 10pp (2008).
113. H. Ishii, K. Sugiyama, E. Ito, and, K. Seki, " Energy Level Alignment and Interfacial Electronic Structures at Organic/Metal and Organic/Organic Interfaces," Adv. Mater., 11, 605-25 (1999).
114. Y. Gao, " Surface Analytical Studies of Interfaces in Organic Semiconductor Devices," Mater. Sci. Eng., R, 68, 39-87 (2010).
115. M.G. Mason, L.S. Hung, C.W. Tang, S.T. Lee, K.W. Wong, and, M. Wang, " Characterization of Treated Indium-Tin-Oxide Surfaces Used in Electroluminescent Devices," J. Appl. Phys., 86, 1688-92 (1999).
116. K. Sugiyama, H. Ishii, Y. Ouchi, and, K. Seki, " Dependence of Indium-Tin-Oxide Work Function on Surface Cleaning Method as Studied by Ultraviolet and X-ray Photoemission Spectroscopies," J. Appl. Phys., 87, 295-8 (2000).
117. J.S. Kim, B. Lägel, E. Moons, N. Johansson, I.D. Baikie, W.R. Salaneck, R.H. Friend, and, F. Cacialli, " Kelvin Probe and Ultraviolet Photoemission Measurements of Indium tin Oxide Work Function: A Comparison," Synth. Met., 111-112, 311-4 (2000).
118. F. Nüesch, L.J. Rothberg, E.W. Forsythe, Q.T. Le, and, Y. Gao, " A Photoelectron Spectroscopy Study on the Indium tin Oxide Treatment by Acids and Bases," Appl. Phys. Lett., 74, 880-2 (1999).
119. J.S. Kim, M. Granström, R.H. Friend, N. Johansson, W.R. Salaneck, R. Daik, and, W.J. Feast, " Indium-Tin Oxide Treatments for Single- and Double-Layer Polymeric Light-Emitting Diodes: The Relation Between the Anode Physical, Chemical, and Morphological Properties and the Device Performance," J. Appl. Phys., 84, 6859-70 (1998).
120. C. Donley, D. Dunphy, D. Paine, C. Carter, K. Nebesny, P. Lee, D. Alloway, and, N.R. Armstrong, " Characterization of Indium-Tin Oxide Interfaces Using X-ray Photoelectron Spectroscopy and Redox Processes of a Chemisorbed Probe Molecule: Effect of Surface Pretreatment Conditions," Langmuir, 18, 450-7 (2002).
121. C. Körber, J. Suffner, and, A. Klein, " Surface Energy Controlled Preferential Orientation of Thin Films," J. Phys. D, 43, 055301, 4pp (2010).
122. R.K. Swank, " Surface Properties of II-VI Compounds," Phys. Rev., 153, 844-9 (1967).
123. K. Jacobi, G. Zwicker, and, A. Gutmann, " Work Function, Electron Affinity and Band Bending of Zinc Oxide Surfaces," Surf. Sci., 141, 109-25 (1984).
124. W. Ranke, " Ultraviolet Photoelectron Spectroscopy Investigation of Electron Affinity and Polarity on a Cylindrical GaAs Single Crystal," Phys. Rev., B, 27, 7807-10 (1983).
125. J. Fritsche, D. Kraft, A. Thissen, T. Mayer, A. Klein, and, W. Jaegermann, " Interface Engineering of Chalcogenide Semiconductors in Thin Film Solar Cells: CdTe as an Example," Mater. Res. Soc. Symp. Proc., 668, H6.6 (2001).
126. 3-Based Transparent Conductors," Appl. Phys. Lett., 92, 252106, 3pp (2008).
127. W. Jaegermann, A. Klein, and, T. Mayer, " Interface Engineering of Inorganic Thin Film Solar Cells-Materials Science Challenges for Advanced Physical Concepts," Adv. Mater., 21, 4196-206 (2009).
128. H. Moormann, D. Kohl, and, G. Heiland, " Variations of Work Function and Surface Conductivity on Clean Cleaved Zinc Oxide Surfaces by Annealing and by Hydrogen Adsorption," Surf. Sci., 100, 302-14 (1980).
129. 2(110): Effects of Oxygen," Surf. Sci. Lett., 187, L658-68 (1987).
130. 2(110)-1x1 Surface," Phys. Rev. B, 38, 2072-83 (1988).
131. 3 Thin Films," Phys. Rev. Lett., 108, 016802, 4pp (2012).
132. 3," Phys. Rev. Lett., 101, 116808, 4pp (2008).
133. 2: Oxygen Ionosorption and Spectroscopic Evidence for Adsorbed Oxygen," Chem. Phys. Chem., 7, 2041-52 (2006).
134. H. Geistlinger, " Electron Theory of Thin-Film Gas Sensors," Sensors and Actuators B, 17, 47-60 (1993).
135. H. Bluhm, M. Hävecker, A. Knop-Gericke, M. Kiskinova, R. Schlögl, and, M. Salmeron, " In-Situ X-ray Photoelectron Spectroscopy Studies of Gas-Solid Interfaces at Near-Ambient Conditions," MRS Bull., 34, 1022-30 (2007).
136. 3 Interface," Phys. Chem. Chem. Phys., 11, 3049-54 (2009).
137. 3," Chem. Mater., 24, 4503-10, (2012).
138. J. Maier, Physical Chemistry of Ionic Materials. Wiley-VCH, Weinheim, 2004.
139. G. Blaustein, M.S. Castro, and, C.M. Aldao, " Influence of Frozen Distributions of Oxygen Vacancies on Tin Oxide Conductance," Sensors and Actuators B, 55, 33-7 (1999).
140. J. Jamnik, B. Kamp, R. Merkle, and, J. Maier, " Space Charge Influenced Oxygen Incorporation in Oxides: In How Far Does it Contribute to the Drift of Taguchi Sensors? " Solid State Ionics, 150, 157-66 (2002).
141. 2 Surfaces," Phys. Chem. Chem. Phys., 13, 3223-6 (2011).
142. C. Körber, " Herstellung und Charakterisierung Polykristalliner Kathodenzerstäubter Zinnoxid-Dünnschichten "; Thesis, Technische Universität, Darmstadt, 2010. http://tuprints.ulb.tu-darmstadt.de/2081/.
143. Y. Gassenbauer, R. Schafranek, A. Klein, S. Zafeiratos, M. Hävecker, A. Knop-Gericke, and, R. Schlögl, " Surface Potential Changes of Semiconducting Oxides Monitored by High-Pressure Photoelectron Spectroscopy: Importance of Electron Concentration at the Surface," Solid State Ionics, 177, 3123-7 (2006).
144. M. Fahlman, A. Crispin, X. Crispin, S.K.M. Henze, M.P. de Jong, W. Osikowicz, C. Tengstedt, and, W.R. Salaneck, " Electronic Structure of Hybrid Interfaces for Polymer-Based Electronics," J. Phys.-Condens. Matter, 19, 183202, 20pp (2007).
145. O. Lang, A. Klein, C. Pettenkofer, W. Jaegermann, and, A. Chevy, " Band Line-up of Lattice Mismatched InSe/GaSe Quantum Well Structures Prepared by Van der Waals Epitaxy: Absence of Interfacial Dipoles," J. Appl. Phys., 80, 3817-21 (1996).
146. R. Schlaf, O. Lang, C. Pettenkofer, and, W. Jaegermann, " Band Lineup of Layered Semiconductor Heterointerfaces Prepared by Van der Waals Epitaxy: Charge Transfer Correction Term for the Electron Affinity Rule," J. Appl. Phys., 85, 2732-53 (1999).
147. W.R. Salaneck, M. Löglund, M. Fahlmann, G. Greczynski, and, T. Kugler, " The Electronic Structure of Polymer-Metal Interfaces Studied by Ultraviolet Photoelectron Spectroscopy," Mater. Sci. Eng., R, 34, 121-46 (2001).
148. F. Flores, and, C. Tejedor, " Energy Barriers and Interface States at Heterojunctions," J. Phys. C, 12, 731-49 (1979).
149. S.G. Louie, J.R. Chelikowsky, and, M.L. Cohen, " Ionicity and the Theory of Schottky Barriers," Phys. Rev. B, 15, 2154-62 (1977).
150. J. Tersoff, " Schottky Barrier Heights and the Continuum of Gap States," Phys. Rev. Lett., 52, 465-8 (1984).
151. J. Tersoff, " Theory of Semiconductor Heterojunction: The Role of Quantum Dipoles," Phys. Rev. B, 30, 4874-7 (1984).
152. W. Mönch, Electronic Properties of Semiconductor Interfaces. Springer-Verlag, Heidelberg, 2003.
153. S. Kurtin, T.C. McGill, and, C.A. Mead, " Fundamental Transition in the Electronic Nature of Solids," Phys. Rev. Lett., 22, 1433-6 (1969).
154. S.-H. Wei, and, A. Zunger, " Calculated Natural Band Offsets of all II-VI and III-V Semiconductors: Chemical Trends and the Role of Cation d Orbitals," Appl. Phys. Lett., 72, 2011-3 (1998).
155. 2O: Dependence on Oxygen Pressure and Interface Formation with ITO," J. Appl. Phys., 111, 113704, 7pp (2011).
156. J.M. Langer, C. Delerue, M. Lannoo, and, H. Heinrich, " Transition-Metal Impurities in Semiconductors and Heterojunction Band Lineups," Phys. Rev. B, 38, 7723-39 (1988).
157. C.G. Van de Walle, and, J. Neugebauer, " Universal Alignment of Hydrogen Levels in Semiconductors, Insulators and Solutions," Nature, 423, 626-8 (2003).
158. A. Klein, F. Säuberlich, B. Späth, T. Schulmeyer, and, D. Kraft, " Non-Stoichiometry and Electronic Properties of Interfaces," J. Mater. Sci., 42, 1890-900 (2007).
159. A. Klein, C. Körber, A. Wachau, F. Säuberlich, Y. Gassenbauer, S.P. Harvey, D.E. Proffit, and, T.O. Mason, " Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function, and Energy Band Alignment," Materials, 3, 4892-914 (2010).
160. J. Robertson, " Band Offsets of Wide-Band-gap Oxides and Implications for Future Electronic Devices," J. Vac. Sci. Technol., B, 18, 1785-91 (2000).