Orientation dependent ionization potential of In2O3: A natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Journal of Physics Condensed Matter

Volumn 23, Issue 33, 2011, Pages

  Hohmann, Mareike V ^a   Goston, Péter ^a   Wachau, André ^a   Bayer, Thorsten J M ^a   Brötz, Joachim ^a   Albe, Karsten ^a   Klein, Andreas ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; BARRIER FORMATION; DEPOSITION CONDITIONS; DEPOSITION TECHNIQUE; ELECTRODE INTERFACE; ELECTRODE MATERIAL; ITO FILMS; NATURAL SOURCES; ORGANIC ELECTRONICS; ORIENTATION DEPENDENCE; ORIENTATION DEPENDENT; OXYGEN DIMERS; OXYGEN PLASMAS; POLYCRYSTALLINE; SN-DOPED; STABLE SURFACES; SURFACE ORIENTATION; SURFACE TERMINATION; THIN SOLID FILM; UV-OZONE TREATMENT;

DENSITY FUNCTIONAL THEORY; DIMERS; EPITAXIAL GROWTH; INDIUM; OZONE; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; SURFACES; TIN; WORK FUNCTION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

IONIZATION POTENTIAL;

INDIUM; INDIUM OXIDE; INDIUM TIN OXIDE; TIN DERIVATIVE; TIN DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRODE; ELECTRONICS; MATERIALS TESTING; OXIDATION REDUCTION REACTION; SURFACE PROPERTY; X RAY DIFFRACTION;

ELECTRODES; ELECTRONICS; INDIUM; MATERIALS TESTING; OXIDATION-REDUCTION; SURFACE PROPERTIES; TIN COMPOUNDS; X-RAY DIFFRACTION;

EID: 80051932947     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/33/334203     Document Type: Article

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