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Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 16, 2010, Pages

Electronic structure of In2 O3 and Sn-doped In 2 O3 by hard x-ray photoemission spectroscopy

(10) Korber C a Krishnakumar, V a Klein, A a Panaccione, G b Torelli, P c Walsh, A d Da Silva, J L F e Wei, S H f Egdell, R G g Payne, D J g

a DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

b LABORATORIO TASC (Italy)

c CNR Consiglio Nazionale delle Ricerche (Italy)

d UNIVERSITY COLLEGE LONDON (United Kingdom)

e UNIVERSITY OF SÃO PAULO (Brazil)

f NATIONAL RENEWABLE ENERGY LABORATORY (United States)

g UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955399729 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.81.165207 Document Type: Article

Times cited : (129)

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