Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule

Thin Solid Films

Volumn 520, Issue 10, 2012, Pages 3721-3728

  Klein, Andreas ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Common anion rule; Electron affinity rule; Energy band alignment; Fermi level pinning; Induced gap states; Interface defects; Photoemission; Semiconducting oxides

Indexed keywords

COMMON ANION RULE; ENERGY BAND ALIGNMENT; FERMI LEVEL PINNING; GAP STATE; INTERFACE DEFECTS; SEMICONDUCTING OXIDE;

BAND STRUCTURE; ELECTRON AFFINITY; FERMI LEVEL; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); IONS; LEAD; PEROVSKITE; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; ZINC OXIDE; ZIRCONIUM;

ALIGNMENT;

EID: 84858341750     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.055     Document Type: Conference Paper

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