Frontier of transparent oxide semiconductors

Solid-State Electronics

Volumn 47, Issue 12, 2003, Pages 2261-2267

  Ohta, Hiromichi ^a   Nomura, Kenji ^a,b   Hiramatsu, Hidenori ^a   Ueda, Kazushige ^b   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Deep UV transparent conductive oxide; Novel p type transparent oxide semiconductor; Reactive solid phase epitaxy (R SPE); Transparent field effect transistor (TFET); Transparent oxide optoelectronics; Transparent oxide semiconductors (TOSs)

Indexed keywords

EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; OPTOELECTRONIC DEVICES;

TRANSPARENT OXIDE SEMICONDUCTORS (TOS);

SEMICONDUCTOR MATERIALS;

EID: 0142011544     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00208-9     Document Type: Article

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