Indium-tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance

Journal of Applied Physics

Volumn 84, Issue 12, 1998, Pages 6859-6870

  Kim, J S ^a   Granstrom M ^a   Friend, R H ^a   Johansson, N ^b   Salaneck, W R ^b   Daik, R ^c   Feast, W J ^c   Cacialli, F ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b LINKÖPING UNIVERSITY   (Sweden)

^c DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; ORGANIC POLYMERS; PHOTOLUMINESCENCE; PLASMA ETCHING; SURFACE CLEANING; SURFACE ROUGHNESS; SURFACE TREATMENT; TIN COMPOUNDS;

CONDUCTING POLYMER HOLE INJECTION LAYER; INDIUM TIN OXIDE; POLYPHENYLENEVYNILENE; SHEET RESISTANCE; TRANSPARENT CONDUCTING OXIDES; WORK FUNCTION;

THIN FILMS;

EID: 0032534440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368981     Document Type: Article

References (45)

1. J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burn, and A. B. Holmes, Nature (London) 347, 539 (1990).
2. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
3. F. Cacialli, R. H. Friend, S. C. Moratti, and A. B. Holmes, Synth. Met. 67, 157 (1994).
4. Y. Hamada, T. Sano, K. Shibata, and K. Kuroki, Jpn. J. Appl. Phys., Part 2 34, L824 (1995).
5. B. H. Cumpston and K. F. Jensen, Synth. Met. 73, 195 (1995).
6. B. H. Cumpston and K. F. Jensen, Appl. Phys. Lett. 69, 394 (1996).
7. C. Adachi, K. Nagai, and N. Tamoto, Appl. Phys. Lett. 66, 2679 (1995).
8. J. C. Scott, J. H. Kaufman, J. Salem, J. A. Goitia, P. J. Brock, and R. Dipietro, Mol. Cryst. Liq. Cryst. Sci. Technol., Sect. A 283, 57 (1996).
9. J. C. Scott, J. H. Kaufman, P. J. Brock, R. Dipietro, J. Salem, and J. A. Goitia, J. Appl. Phys. 79, 2745 (1996).
10. H. Aziz and G. Xu, Synth. Met. 80, 7 (1996).
11. B. H. Cumpston and K. F. Jensen, Trends Polym. Sci. 4, 151 (1996).
12. C. I. Chao, K. R. Chuang, and S. A. Chen, Appl. Phys. Lett. 69, 2894 (1996).
13. L. Abate, S. Calanna, A. Pollicino, and A. Recca, Macromol. Chem. Phys. 198, 1437-1454 (1997).
14. J. C. Carter, I. Grizzi, S. K. Heeks, D. J. Lacey, S. G. Latham, P. G. May, O. R. Delospanos, K. Pichler, C. R. Towns, and H. F. Wittmann, Appl. Phys. Lett. 71, 34 (1997).
15. A. Berntsen, Y. Croonen, R. Cuijpers, B. Habets, C. Liedenbaum, H. Schoo, R, J. Visser, J. Vleggaar, and P. v. d. Weijer, Proc. SPIE 3148, 264 (1997).
16. S. A. Van Slyke, C. H. Chen, and C. W. Tang, Appl. Phys. Lett. 69, 2160 (1996); and J. Shi and C. W. Tang, ibid. 70, 1665 (1997).
17. S. A. Van Slyke, C. H. Chen, and C. W. Tang, Appl. Phys. Lett. 69, 2160 (1996); and J. Shi and C. W. Tang, ibid. 70, 1665 (1997).
18. V. Cimrova and D. Neher, Synth. Met. 76, 125 (1996).
19. I. Hamberg and C. G. Granqvist, J. Appl. Phys. 60, R123 (1986).
20. J. R. Bellingham, W. A. Phillips, and C. J. Adkins, J. Mater. Sci. Lett. 11, 263 (1992).
21. S. A. Carter, J. C. Scott, and P. J. Brock, Appl. Phys. Lett. 71, 1145 (1997).
22. S. Karg, J. C. Scott, J. R. Salem, and M. Angelopoulos, Synth. Met. 80, 111 (1996).
23. C. C. Wu, C. I. Wu, J. C. Sturm, and A. Kahn, Appl. Phys. Lett. 70, 1348 (1997).
24. S. Fujita, T. Sakamoto, K. Ueda, K. Ohta, and S. Fujita, Jpn. J. Appl. Phys., Part 1 36, 350 (1997).
25. F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, Appl. Phys. Lett. 70, 2741 (1997).
26. K. Furukawa, Y. Terasaka, H. Ueda, and M. Matsumura, Synth. Met. 91, 99 (1997).
27. J. Gmeiner, S. Karg, M. Meier, W. Riess, P. Strohriegl, and M. Schwoerer, Acta Polym. 44, 201 (1993).
28. M. Herold, J. Gmeiner, and M. Schwoerer, Acta Polym. 47, 436 (1996).
29. C. Y. Chang and S. M. Sze, ULSI Technology (McGraw-Hill, Singapore, 1996).
30. W. J. Feast, I. S. Millichamp, R. H. Friend, M. E. Horton, D. Phillips, S. D. D. V. Rughooputh, and G. Rumbles, Synth. Met. 10, 181 (1985).
31. F. Jonas and L. Schrader, Synth. Met. 41, 831 (1991).
32. G. Heywang and F. Jonas, Adv. Mater. 4, 116 (1992).
33. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, Singapore, 1981).
34. K. Z. Xing, M. Fahlman, X. W. Chen, O. Inganas, and W. R. Salaneck, Synth. Met. 89, 161 (1997).
35. E. W. Plummer, Top. Appl. Phys. 4, 25 (1975).
36. C. S. Fadley, in Electron Spectroscopy: Theory, Techniques and Applications, edited by C. R. Brundle and A. D. Baker (Academic, London, 1978), p. 1.
37. J. C. deMello, H. F. Wittmann, and R. H. Friend, Adv. Mater. 9, 230 (1997).
38. A. Andersson, N. Johansson, P. Bröms, N. Yu, D. Lupo, and W. R. Salaneck, Adv. Mater. 10, 77 (1998).
39. P. A. Cox, The Electronic Structure and Chemistry of Solids (Oxford University Press, New York, 1987).
40. T. Ishida, H. Kobayashi, and Y. Nakato, J. Appl. Phys. 73, 4344 (1993).
41. N. C. Greenham, I. D. W. Samuel, G. R. Hayes, R. T. Phillips, Y. A. R. R. Kessener, S. C. Moratti, A. B. Holmes, and R. H. Friend, Chem. Phys. Lett. 241, 89 (1995).
42. J. H. F. Martens, D. A. Halliday, E. A. Marseglia, D. D. C. Bradley, R. H. Friend, P. L. Burn, A. B. Holmes, and A. Kraft, Synth. Met. 55-57, 434 (1993).
43. A. Berntsen, P. v. d. Weijer, Y. Croonen, C. Liedenbaum, and J. Vleggaar, Opt. Mater. 9, 125 (1998).
44. S. A. Carter, M. Angelopoulos, S. Karg, P. J. Brock, and J. C. Scott, Appl. Phys. Lett. 70, 2067 (1997).
45. J. C. Scott, S. Karg, and S. A. Carter, J. Appl. Phys. 82, 1454 (1997).