Atomic-scale silicon etching control using pulsed Cl2 plasma

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 1, 2013, Pages

  Petit Etienne, Camille ^a   Darnon, Maxime ^a   Bodart, Paul ^a   Fouchier, Marc ^a   Cunge, Gilles ^a   Pargon, Erwine ^a   Vallier, Laurent ^a   Joubert, Olivier ^a   Banna, Samer ^b  

^a Laboratoire Interdisciplinaire de Physique   (France)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHLORINE; CRYSTALLINE MATERIALS; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

ANGLE-RESOLVED XPS; ATOMIC LEVELS; ATOMIC SCALE; CHAMBER WALLS; COMPLEX ARCHITECTURES; CONTINUOUS WAVE; CRYSTALLINE SILICON SURFACES; CRYSTALLINE SILICONS; ETCH RATES; ION FLUXES; LOW DUTY-CYCLES; LOWER DENSITY; MINIATURIZATION TECHNOLOGIES; PLASMA PROCESS; PLASMA-INDUCED DAMAGE; POWERFUL DEVICES; PULSED PLASMA; SEMICONDUCTOR INDUSTRY; SILICON ETCHING; THIN LAYERS; ULTRATHIN LAYERS;

PLASMAS;

EID: 84872717887     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4768717     Document Type: Article

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