Si etching rate calculation for low pressure high density plasma source using Cl2 gas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 5, 2000, Pages 2224-2229

  Lee, Young D ^a   Chang, H Y ^a   Chang, C S ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; ETCHING; ION BOMBARDMENT; PLASMA SOURCES; REACTION KINETICS;

ETCHING RATES; ION PLASMA FREQUENCY; SUM OF INDEPENDENT MONOENERGETIC BEAMS (SIMB); THRESHOLD ENERGIES;

SILICON;

EID: 0034272616     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1286197     Document Type: Article

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