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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1510-1513

Reactive ion etching of Si by Cl and Cl2 ions: Molecular dynamics simulations with comparisons to experiment

(3) Hanson, D E a Kress, J D a Voter, A F a

a LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000684631 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.581844 Document Type: Review

Times cited : (17)

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