Etching mechanisms of thin SiO2 exposed to Cl2 plasma

Journal of Vacuum Science and Technology B

Volumn 29, Issue 5, 2011, Pages

  Petit Etienne, C ^a   Darnon, M ^a   Vallier, L ^a   Pargon, E ^a   Cunge, G ^a   Fouchier, M ^a   Bodart, P ^a   Haass, M ^a   Brihoum, M ^a   Joubert, O ^a   Banna, S ^b   Lill, T ^b  

^a CNRS   (France)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; CHLORINE COMPOUNDS; ETCHING; SILICA;

CHLORINE ATOM; CHLORINE-BASED PLASMA; ETCHING MECHANISM; EXPOSED TO; INTERFACE LAYER; PATTERNING TECHNOLOGY; SILICON ETCHING; THIN SILICON OXIDE;

SILICON OXIDES;

EID: 80053464751     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3622311     Document Type: Article

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