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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 2, 2012, Pages

Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas

(4) Shin, Hyungjoo a Zhu, Weiye a Donnelly, Vincent M a Economou, Demetre J a

a UNIVERSITY OF HOUSTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; ATOMIC LAYER ETCHING; AUGER NEUTRALIZATION; BOUNDARY ELECTRODES; CHEMICAL ETCHING; CL ATOMS; DC BIAS; ETCHING RATE; HIGH SELECTIVITY; INDUCTIVELY-COUPLED; ION ENERGIES; ION ENERGY DISTRIBUTIONS; ION-ASSISTED ETCHING; LOW DAMAGES; LOW ENERGY ELECTRONS; LOW ENERGY IONS; METASTABLES; MICROTRENCHES; MONOENERGETIC; P-TYPE SI; PROFILE EVOLUTION; SILICON ETCHING; SQUARE ROOTS; SUBTHRESHOLD;

CHLORINE; ELECTROMAGNETIC INDUCTION; EXPERIMENTS; IONS; PLASMAS; SILICON;

ETCHING;

EID: 84858054311 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3681285 Document Type: Article

Times cited : (56)

References (46)

1
- 0018469799
- Ion- and electron-assisted gas-surface chemistry - An important effect in plasma etching
- DOI 10.1063/1.326355
- J. W. Coburn and H. F. Winters, J. Appl. Phys. 50, 3189 (1979). 10.1063/1.326355 (Pubitemid 10469931)
- (1979) Journal of Applied Physics , vol.50 , Issue.5 , pp. 3189-3196
- Coburn, J.W.¹ Winters Harold, F.²

2
- 0035440209
- 2/Si fluorocarbon plasma etch selectivity
- DOI 10.1116/1.1387056
- S.-B. Wang and A. E. Wendt, J. Vac. Sci. Technol. A 19, 2425 (2001). 10.1116/1.1387056 (Pubitemid 32934650)
- (2001) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.19 , Issue.5 , pp. 2425-2432
- Wang, S.-B.¹ Wendt, A.E.²

3
- 0021817648
- 10.1143/JJAP.24.68
- H. Okano, Y. Horiike, and M. Sekine, Jpn. J. Appl. Phys. 24, 68 (1985). 10.1143/JJAP.24.68
- (1985) Jpn. J. Appl. Phys. , vol.24 , pp. 68
- Okano, H.¹ Horiike, Y.² Sekine, M.³

4
- 0005761335
- 10.1088/0034-4885/12/1/308
- N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1949). 10.1088/0034-4885/12/1/308
- (1949) Rep. Prog. Phys. , vol.12 , pp. 163
- Cabrera, N.¹ Mott, N.F.²

5
- 0020736395
- Surface processes in plasma-assisted etching environments
- DOI 10.1116/1.582629
- H. F. Winters, J. W. Coburn, and T. J. Chuang, J. Vac. Sci. Technol. B 1, 469 (1983). 10.1116/1.582629 (Pubitemid 13570557)
- (1983) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.1 , Issue.2 , pp. 469-480
- Winters Harold, F.¹ Coburn, J.W.² Chuang, T.J.³

6
- 0011718401
- 10.1103/PhysRevB.39.10120
- F. A. Houle, Phys. Rev. B 39, 10120 (1989). 10.1103/PhysRevB.39.10120
- (1989) Phys. Rev. B , vol.39 , pp. 10120
- Houle, F.A.¹

7
- 0023384557
- 10.1007/BF00615982
- R. Kullmer and D. Bäuerle, Appl. Phys. A 43, 227 (1987). 10.1007/BF00615982
- (1987) Appl. Phys. A , vol.43 , pp. 227
- Kullmer, R.¹ Bäuerle, D.²

8
- 0023997823
- 10.1007/BF00617934
- P. Mogyorsi, K. Piglmayer, R. Kullmer, and D. Bäuerle, Appl. Phys. A 45, 293 (1988). 10.1007/BF00617934
- (1988) Appl. Phys. A , vol.45 , pp. 293
- Mogyorsi, P.¹ Piglmayer, K.² Kullmer, R.³ Bäuerle, D.⁴

9
- 0001524657
- 10.1016/0039-6028(86)90171-8
- R. B. Jackman, H. Ebert, and J. S. Foord, Surf. Sci. 176, 183 (1986). 10.1016/0039-6028(86)90171-8
- (1986) Surf. Sci. , vol.176 , pp. 183
- Jackman, R.B.¹ Ebert, H.² Foord, J.S.³

10
- 34547859668
- Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam
- DOI 10.1143/JJAP.46.L64
- S. Samukawa, B. Jinnai, F. Oda, and Y. Morimoto, Jpn. J. Appl. Phys. 46, L64 (2007). 10.1143/JJAP.46.L64 (Pubitemid 47252496)
- (2007) Japanese Journal of Applied Physics, Part 2: Letters , vol.46 , Issue.1-3
- Samukawa, S.¹ Jinnai, B.² Oda, F.³ Morimoto, Y.⁴

11
- 80053612131
- 10.1088/0963-0252/20/5/055001
- H. Shin, W. Zhu, L. Xu, V. M. Donnelly, and D. J. Economou, Plasma Sources Sci. Technol. 20, 055001 (2011). 10.1088/0963-0252/20/5/055001
- (2011) Plasma Sources Sci. Technol. , vol.20 , pp. 055001
- Shin, H.¹ Zhu, W.² Xu, L.³ Donnelly, V.M.⁴ Economou, D.J.⁵

12
- 0033515978
- 10.1016/S0168-583X(99)00073-7
- M. R. Wertheimer, A. C. Fozza, and A. Holländer, Nucl. Instrum. Methods Phys. Res. B 151, 65 (1999). 10.1016/S0168-583X(99)00073-7
- (1999) Nucl. Instrum. Methods Phys. Res. B , vol.151 , pp. 65
- Wertheimer, M.R.¹ Fozza, A.C.² Holländer, A.³

13
- 42349103371
- Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193 nm photoresist roughening and degradation
- DOI 10.1063/1.2912028
- D. Nest, D. B. Graves, S. Engelmann R. L. Bruce, F. Weilnboeck, G. S. Oehrlein, C. Andes, and E. A. Hudson, Appl. Phys. Lett. 92, 153113 (2008). 10.1063/1.2912028 (Pubitemid 351555751)
- (2008) Applied Physics Letters , vol.92 , Issue.15 , pp. 153113
- Nest, D.¹ Graves, D.B.² Engelmann, S.³ Bruce, R.L.⁴ Weilnboeck, F.⁵ Oehrlein, G.S.⁶ Andes, C.⁷ Hudson, E.A.⁸

14
- 62549118276
- 10.1063/1.3094128
- E. Pargon, M. Martin, K. Menguelti, L. Azarnouche, J. Foucher, and O. Joubert, Appl. Phys. Lett. 94, 10311 (2009). 10.1063/1.3094128
- (2009) Appl. Phys. Lett. , vol.94 , pp. 10311
- Pargon, E.¹ Martin, M.² Menguelti, K.³ Azarnouche, L.⁴ Foucher, J.⁵ Joubert, O.⁶

15
- 80051478168
- 10.1088/0022-3727/44/32/325203
- J. Lee and D. B. Graves, J. Phys. D 44, 325203 (2011). 10.1088/0022-3727/44/32/325203
- (2011) J. Phys. D , vol.44 , pp. 325203
- Lee, J.¹ Graves, D.B.²

16
- 68549088990
- 10.1088/0963-0252/18/3/034007
- I. Tanarro and V. J. Herrero, Plasma Sources Sci. Technol. 18, 034007 (2009). 10.1088/0963-0252/18/3/034007
- (2009) Plasma Sources Sci. Technol. , vol.18 , pp. 034007
- Tanarro, I.¹ Herrero, V.J.²

17
- 0031097155
- Cross sections for resonant charge transfer between atoms and their positive ions
- DOI 10.1006/adnd.1997.0738, PII S0092640X97907385
- F. B. M. Copeland and D. S. F. Crothers, At. Data Nucl. Data Tables 65, 273 (1997). 10.1006/adnd.1997.0738 (Pubitemid 127171275)
- (1997) Atomic Data and Nuclear Data Tables , vol.65 , Issue.2 , pp. 273-288
- Copeland, F.B.M.¹ Crothers, D.S.F.²

18
- 0012003712
- S. H. Pullins, R. A. Dressler, R. Torrents, and D. Gerlich, Z. Phys. 214, 1279 (2000).
- (2000) Z. Phys. , vol.214 , pp. 1279
- Pullins, S.H.¹ Dressler, R.A.² Torrents, R.³ Gerlich, D.⁴

19
- 0005263869
- 10.1116/1.576993
- V. M. Donnelly and J. A. McCaulley, J. Vac. Sci. Technol. A 8, 84 (1990). 10.1116/1.576993
- (1990) J. Vac. Sci. Technol. A , vol.8 , pp. 84
- Donnelly, V.M.¹ McCaulley, J.A.²

20
- 0020206062
- 10.1149/1.2123600
- V. M. Donnelly, D. L. Flamm, C. W. Tu, and D. E. Ibbotson, J. Electrochem. Soc. 129, 2533 (1982). 10.1149/1.2123600
- (1982) J. Electrochem. Soc. , vol.129 , pp. 2533
- Donnelly, V.M.¹ Flamm, D.L.² Tu, C.W.³ Ibbotson, D.E.⁴

21
- 21144464299
- 10.1116/1.578202
- V. M. Donnelly, J. Vac. Sci. Technol. A 10, 1060 (1992). 10.1116/1.578202
- (1992) J. Vac. Sci. Technol. A , vol.10 , pp. 1060
- Donnelly, V.M.¹

22
- 0000452347
- 10.1103/PhysRevB.49.7408
- J. A. McCaulley, V. M. Donnelly, M. Vernon, and I. Taha, Phys. Rev. B 49, 7408 (1994). 10.1103/PhysRevB.49.7408
- (1994) Phys. Rev. B , vol.49 , pp. 7408
- McCaulley, J.A.¹ Donnelly, V.M.² Vernon, M.³ Taha, I.⁴

23
- 0031500120
- Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine
- DOI 10.1116/1.580652
- J. P. Chang, J. C. Arnold, G. C. H. Zau, H.-S. Shin, and H. H. Sawin, J. Vac. Sci. Technol. A 15, 1853 (1997). 10.1116/1.580652 (Pubitemid 127098704)
- (1997) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.15 , Issue.4 , pp. 1853-1863
- Chang, J.P.¹ Arnold, J.C.² Zau, G.C.H.³ Shin, H.-S.⁴ Sawin, H.H.⁵

24
- 84858050602
- J. Vac. Sci. Technol. A (submitted).
- H. Shin, W. Zhu, V. M. Donnelly, and D. J. Economou, Ion energy distributions, electron temperatures and electron densities in Ar, Kr and Xe pulsed discharges., J. Vac. Sci. Technol. A (submitted).
- Ion Energy Distributions, Electron Temperatures and Electron Densities in Ar, Kr and Xe Pulsed Discharges
- Shin, H.¹ Zhu, W.² Donnelly, V.M.³ Economou, D.J.⁴

25
- 0031270036
- 10.1116/1.580899
- J. Y. Choe, I. P. Herman, and V. M. Donnelly, J. Vac. Sci. Technol. A 15, 3024 (1997). 10.1116/1.580899
- (1997) J. Vac. Sci. Technol. A , vol.15 , pp. 3024
- Choe, J.Y.¹ Herman, I.P.² Donnelly, V.M.³

26
- 0036671840
- 10.1088/0963-0252/11/3A/303
- V. M. Donnelly, M. V. Malyshev, M. Schabel, A. Kornblit, W. Tai, I. P. Herman, and N. C. M. Fuller, Plasma Sources Sci. Technol. 11, A26 (2002). 10.1088/0963-0252/11/3A/303
- (2002) Plasma Sources Sci. Technol. , vol.11 , pp. 26
- Donnelly, V.M.¹ Malyshev, M.V.² Schabel, M.³ Kornblit, A.⁴ Tai, W.⁵ Herman, I.P.⁶ Fuller, N.C.M.⁷

27
- 5844325521
- 2 in a high-density helical resonator plasma
- DOI 10.1116/1.580137, Vacuum, Surfaces, and Films
- V. M. Donnelly, J. Vac. Sci. Technol. A 14, 1076 (1996). 10.1116/1.580137 (Pubitemid 126082218)
- (1996) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.14 , Issue.3 PART 1 , pp. 1076-1087
- Donnelly, V.M.¹

28
- 5844345850
- + beam scattering
- DOI 10.1116/1.580692
- J. P. Chang and H. H. Sawin, J. Vac. Sci. Technol. A 15, 610 (1997). 10.1116/1.580692 (Pubitemid 127081975)
- (1997) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.15 , Issue.NUMBER 1 , pp. 610-615
- Chang, J.P.¹ Sawin, H.H.²

29
- 0035440964
- 2, and HBr high density plasmas
- DOI 10.1116/1.1378077
- S. A. Vitale, H. Chae, and H. H. Sawin, J. Vac. Sci. Technol. A 19, 2197 (2001). 10.1116/1.1378077 (Pubitemid 32934626)
- (2001) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.19 , Issue.5 , pp. 2197-2206
- Vitale, S.A.¹ Chae, H.² Sawin, H.H.³

30
- 0030550099
- Low-energy Ar ion-induced and chlorine ion etching of silicon
- DOI 10.1116/1.579924
- M. Balooch, M. Moalem, Wei -E. Wang, and A. V. Hamza, J. Vac. Sci. Technol. A 14, 229 (1996). 10.1116/1.579924 (Pubitemid 126024991)
- (1996) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.14 , Issue.1 , pp. 229-233
- Balooch, M.¹ Moalem, M.² Wang, W.-E.³ Hamza, A.V.⁴

31
- 0001442869
- 10.1063/1.102336
- C. Steinbrüchel, Appl. Phys. Lett. 55, 1960 (1989). 10.1063/1.102336
- (1989) Appl. Phys. Lett. , vol.55 , pp. 1960
- Steinbrüchel, C.¹

32
- 36549098645
- 10.1063/1.345388
- E. A. Ogryzlo, D. E. Ibbotson, D. L. Flamm, and J. A. Mucha, J. Appl. Phys. 67, 3115 (1990). 10.1063/1.345388
- (1990) J. Appl. Phys. , vol.67 , pp. 3115
- Ogryzlo, E.A.¹ Ibbotson, D.E.² Flamm, D.L.³ Mucha, J.A.⁴

33
- 0019016751
- Anisotropic plasma etching of polysilicon
- DOI 10.1116/1.570549
- C. J. Mogab and H. J. Levinstein, J. Vac. Sci. Technol. 17, 721 (1980). 10.1116/1.570549 (Pubitemid 11425932)
- (1980) Journal of vacuum science & technology , vol.17 , Issue.3 , pp. 721-730
- Mogab, C.J.¹ Levinstein, H.J.²

34
- 84952618677
- 10.1351/pac199062091709
- D. L. Flamm, Pure Appl. Chem. 62, 1709 (1990). 10.1351/pac199062091709
- (1990) Pure Appl. Chem. , vol.62 , pp. 1709
- Flamm, D.L.¹

35
- 2942567762
- 10.1088/0963-0252/13/2/016
- P. Macho and N. Sadeghi, Plasma Sources Sci. Technol 13, 303 (2004). 10.1088/0963-0252/13/2/016
- (2004) Plasma Sources Sci. Technol , vol.13 , pp. 303
- MacHo, P.¹ Sadeghi, N.²

36
- 1542389348
- 10.1103/PhysRevB.8.1580
- H. D. Hagstrum and G. E. Becker, Phys. Rev. B 8, 1580 (1973). 10.1103/PhysRevB.8.1580
- (1973) Phys. Rev. B , vol.8 , pp. 1580
- Hagstrum, H.D.¹ Becker, G.E.²

37
- 36149021415
- 10.1103/PhysRev.96.325
- H. D. Hagstrum, Phys. Rev. 96, 325 (1954). 10.1103/PhysRev.96.325
- (1954) Phys. Rev. , vol.96 , pp. 325
- Hagstrum, H.D.¹

38
- 0033413515
- 10.1116/1.582044
- J. R. Woodworth, M. G. Blain, R. L. Jarecki, T. W. Hamilton, and B. P. Aragon, J. Vac. Sci. Technol. A 7, 3209 (1999). 10.1116/1.582044
- (1999) J. Vac. Sci. Technol. A , vol.7 , pp. 3209
- Woodworth, J.R.¹ Blain, M.G.² Jarecki, R.L.³ Hamilton, T.W.⁴ Aragon, B.P.⁵

39
- 0035109215
- Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges
- DOI 10.1116/1.1335685
- J. R. Woodworth, M. E. Riely, V. A. Amatucci, T. W. Hamilton, and B. P. Aragon, J. Vac. Sci. Technol. A 19, 3209 (2001). 10.1116/1.1335685 (Pubitemid 32168576)
- (2001) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.19 , Issue.1 , pp. 45-55
- Woodworth, J.R.¹

40
- 0010429609
- Photochemical etching with tunable VUV radiation
- DOI 10.1016/0368-2048(96)02920-9, PII S0368204896029209
- U. Streller, B. Li, A. Krabbe, H.P. Krause, I. Twesten, and N. Schwentner, J. Electron Spectrosc. Related Phenom. 80, 49 (1996). 10.1016/0368-2048(96)02920-9 (Pubitemid 126328303)
- (1996) Journal of Electron Spectroscopy and Related Phenomena , vol.80 , pp. 49-54
- Streller, U.¹ Li, B.² Krabbe, A.³ Krause, H.P.⁴ Twesten, I.⁵ Schwentner, N.⁶

41
- 84858042141
- U. Streller, B. Li, A. Krabbe, and N. Schwentner, Appl. Surf. Sci. 96-98, 488 (1996).
- (1996) Appl. Surf. Sci. , vol.9698 , pp. 488
- Streller, U.¹ Li, B.² Krabbe, A.³ Schwentner, N.⁴

42
- 0034156118
- 10.1116/1.591282
- M. A. Vyvoda, M. Li, D. B. Graves, H. Lee, M. V. Malyshev, F. P. Klemens, J. T. C. Lee, and V. M. Donnelly, J. Vac. Sci. Technol. B 18, 820 (2000). 10.1116/1.591282
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 820
- Vyvoda, M.A.¹ Li, M.² Graves, D.B.³ Lee, H.⁴ Malyshev, M.V.⁵ Klemens, F.P.⁶ Lee, J.T.C.⁷ Donnelly, V.M.⁸

43
- 0035998543
- 2 and HBr discharges: I. Experimental characterization of polysilicon profiles
- DOI 10.1116/1.1481866
- A. P. Mahorowala, H. H. Sawin, R. Jones, and A. H. Labun, J. Vac. Sci. Technol. B 20, 1055 (2002). 10.1116/1.1481866 (Pubitemid 34751296)
- (2002) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.20 , Issue.3 , pp. 1055-1063
- Mahorowala, A.P.¹ Sawin, H.H.² Jones, R.³ Labun, A.H.⁴

44
- 0000720173
- edited by E. D. Palik (Academic Press, Orlando)
- D. F. Edwards, Handbook of Optical Constants of Solids, edited by, E. D. Palik, (Academic Press, Orlando, 1985), pp. 547-569.
- (1985) Handbook of Optical Constants of Solids , pp. 547-569
- Edwards, D.F.¹

45
- 21844497343
- 10.1116/1.579659
- S. D. Athavale and D. J. Economou, J. Vac. Sci. Technol. A 13, 966 (1995). 10.1116/1.579659
- (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 966
- Athavale, S.D.¹ Economou, D.J.²

46
- 5344239661
- 10.1116/1.588651
- S. D. Athavale and D. J. Economou, J. Vac. Sci. Technol. B 14, 3702 (1996). 10.1116/1.588651
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 3702
- Athavale, S.D.¹ Economou, D.J.²

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