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Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

Molecular dynamics simulations of Cl+ etching on a Si(100) surface

(5) Gou, F a Neyts, E a Eckert, M a Tinck, S a Bogaerts, A a

a UNIVERSITY OF ANTWERP (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BRENNER POTENTIAL; ETCH PRODUCTS; EXPERIMENTAL DATA; MOLECULAR DYNAMICS SIMULATIONS; PHYSICAL SPUTTERING; REACTION LAYERS; SI(100) SURFACE;

DYNAMICS; ETCHING; MOLECULAR DYNAMICS; SILICON; STOICHIOMETRY;

REACTION KINETICS;

EID: 77953631520 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3361038 Document Type: Review

Times cited : (21)

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