Cl2 plasma etching of Si(100): Damaged surface layer studied by in situ spectroscopic ellipsometry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 604-609

  Layadi, N ^a,b   Donnelly, V M ^a   Lee, J T C ^a   Klemens, F P ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041553833     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580691     Document Type: Article

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