Surface analysis during plasma etching by laser-induced thermal desorption

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2410-2415

  Herman, Irving P ^a   Donnelly, Vincent M ^b   Cheng, C C ^b,c   Guinn, Keith V ^b  

^a Columbia University ^*  (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c Gasonics IPC   (United States)

Author keywords

Cl2; HBr; Laser desorption; Laser induced fluorescence (LIF); Optical diagnostics; Plasma etching; Plasmas; Si; XPS

Indexed keywords

CHLORINE COMPOUNDS; DESORPTION; FLUORESCENCE; GASES; LASER BEAM EFFECTS; MIXTURES; PLASMA DENSITY; PLASMAS; SILICON; SILICON COMPOUNDS; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

CHLORIDE HYDROGEN BROMIDE MIXTURES; HIGH CHARGE DENSITY PLASMA; LASER INDUCED FLUORESCENCE; LASER INDUCED THERMAL DESORPTION; SILICON CHLORIDE;

PLASMA ETCHING;

EID: 0030121093     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2410     Document Type: Article

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