Boron emitter passivation with Al2O 3 and Al 2 O3/SiNx stacks using ALD Al2O 3

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 236-245

  Richter, Armin ^a   Benick, Jan ^a   Hermle, Martin ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

aluminum oxide; Atomic layer deposition (ALD); boron emitter; surface passivation

Indexed keywords

ALUMINUM OXIDES; ANNEALING PROCESS; ANTI-REFLECTION; ATOMIC LAYER; BORON-DOPED; BORON-DOPED SILICON; EMITTER DIFFUSION; EMITTER SATURATION CURRENT DENSITY; HIGH TEMPERATURE PROCESS; LAYER THICKNESS; LOW SURFACE CONCENTRATIONS; METAL CONTACTS; MODERATE TEMPERATURE; PASSIVATION PROPERTIES; PHOTOCONDUCTANCE; POST DEPOSITION TREATMENT; SINGLE LAYER; SURFACE CONCENTRATION; SURFACE PASSIVATION; TEXTURED SURFACE; THIN LAYERS; ULTRAVIOLET EXPOSURE;

ATOMIC LAYER DEPOSITION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SILICON NITRIDE;

ALUMINUM;

EID: 84871737943     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2226145     Document Type: Article

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