Towards industrial n-type PERT silicon solar cells: Rear passivation and metallization scheme

Energy Procedia

Volumn 8, Issue , 2011, Pages 479-486

  Richter, Armin ^a   Benick, Jan ^a   Kalio, André ^a   Seiffe, Johannes ^a   Hörteis, Matthias ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Back surface field; N type silicon solar cell; Rear passivation

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; BORON; EFFICIENCY; METALLIZING; PASSIVATION; SEMICONDUCTING SILICON; SILICON; SILICON NITRIDE; SOLAR CELLS;

ATOMIC LAYER; BACK SURFACE FIELDS; CELL DESIGN; FIRING PROCESS; INTERNAL QUANTUM EFFICIENCY; N TYPE SILICON; OPTICAL CONFINEMENT; REAR PASSIVATIONS;

SILICON SOLAR CELLS;

EID: 80052099629     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.169     Document Type: Conference Paper

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