Passivation of highly boron doped silicon surfaces by sputtered AlO x and PECVD SiN, a comparison

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2010, Pages 125-126

  Li, T T A ^a   Cuevas, A ^a   Tan, J ^a   Samundsett, C ^a   Saynova, D ^b   Geerligs, B ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED SILICON; INTERFACIAL LAYER; RECOMBINATION CURRENTS; RF-SPUTTERING; SURFACE PASSIVATION;

BORON; ELECTRIC RESISTANCE; MICROELECTRONICS; SILICON NITRIDE; SILICON OXIDES;

PASSIVATION;

EID: 79951760212     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2010.5699694     Document Type: Conference Paper

References (5)

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2. J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz and S.W. Glunz, 'High efficiency n-type Si solar cells on Al2O3- passivated boron emitters', Appl. Phys. Lett., 92 (25), 253504-3 (2008).
3. T.-TA Li and A. Cuevas, 'Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide', Physica Status Solidi - Rapid Research Letters, 3(5), 160-162 (2009).
4. V. D. Mihailetchi, Y. Komatsu and L. J. Geerligs, 'Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells', Appl. Phys. Lett., 92 (6), 063510-3 (2008).
5. D. E. Kane and R. M. Swanson, 18th IEEE Photovoltaic Specialists Conf, Las Vegas, USA, pp. 578 - 583 (1985).