Back-contact back-junction silicon solar cells under UV illumination

Solar Energy Materials and Solar Cells

Volumn 94, Issue 10, 2010, Pages 1734-1740

  Granek, F ^a   Reichel, C ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Back contact; C Si; Front surface field; UV stability

Indexed keywords

DIFFUSION PROFILES; FORMING GAS; FRONT SURFACES; HIGH ENERGY; PHOSPHORUS-DOPED; SURFACE SATURATION; ULTRA-VIOLET; ULTRA-VIOLET LIGHT; UV EXPOSURE; UV ILLUMINATIONS; UV-STABILITY;

CELLS; DIFFUSION; PASSIVATION; PHOSPHORUS; SILICON; SOLAR CELLS; ULTRAVIOLET RADIATION;

SOLAR ENERGY;

EID: 77955430802     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.05.038     Document Type: Article

References (22)

1. D. De Ceuster, P. Cousins, D. Rose, D. Vicente, P. Tipones, W. Mulligan, Low cost, high volume production of >22% efficiency silicon solar cells, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007, pp. 816819.
2. R.M. Swanson, Device physics for backside-contact solar cells, in: Proceedings of the 33rd IEEE Photovoltaic Specialists Conference, San Diego, USA, 2008.
3. F. Granek, C. Reichel, M. Hermle, D.M. Huljic, O. Schultz, S.W. Glunz, Front surface passivation of n-type high-efficiency back-junction silicon solar cells using front surface field, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference Milan, Italy, 2007, pp. 14541457.
4. F. Granek, M. Hermle, and S.W. Glunz Analysis of the current linearity at low illumination of high-efficiency back-junction back-contact silicon solar cells Physica Status Solidi RRL 2 4 2008 151 153
5. F. Granek, M. Hermle, D. Huljic, O. Schultz-Wittmann, and S.W. Glunz Enhanced lateral current transport via the front N diffused layer of n-type high-efficiency back-junction back-contact silicon solar cells Progress in Photovoltaics: Research and Applications 17 1 2009 47 56
6. W.P. Lee, Y.L. Khong, and W.S. Seow Modelling the ultraviolet irradiation effect on the effective minority carrier recombination lifetime of silicon solar cells Journal of Applied Physics 85 2 1999 994 1001
7. L. Zhong, and S.F. Interface traps creation by sub-band gap irradiation in silicon dioxide on silicon without applied electric field Journal of Applied Physics 79 5 1996 2509 2512
8. P.E. Gruenbaum, R.A. Sinton, and R.M. Swanson Light-induced degradation at the silicon/silicon dioxide interface Applied Physics Letters 52 17 1988 1407 1409
9. P.E. Gruenbaum, R.A. Sinton, R.M. Swanson, Stability problems in point contact solar cells, in: Proceedings of the 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, USA, 1998, pp. 423428.
10. R.A. Sinton, Y. Kwark, J.Y. Gan, and R.M. Swanson 27.5-percent silicon concentrator solar cells IEEE Electron Device Letters, EDL- 7 10 1986 567 569
11. P.E. Gruenbaum, R.R. King, and R.M. Swanson Photoinjected hot-electron damage in silicon point-contact solar cells Journal of Applied Physics 66 12 1989 6110 6114
12. IEC, Photovoltaic devicesPart 3: measurement principles for terrestrial photovoltaic (PV) solar devices with reference spectral irradiance data, International Standard IEC60904-3, 2008.
13. P.E. Gruenbaum, J.Y. Gan, R.R. King, R.M. Swanson, Stable passivations for high-efficiency silicon solar cells, in: Proceedings of the 21st IEEE Photovoltaic Specialists Conference, Kissimmee, FL, USA, 1990, pp. 317322.
14. D.S. Ruby, W.K. Schubert, The effects of concentrated ultraviolet light on high-efficiency silicon solar cells, in: Proceedings of the 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, USA, 1991, pp. 111117.
15. G. Masetti, M. Severi, and S. Solmi Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon IEEE Transactions on Electron Devices 30 7 1983 764 769
16. IEC, Crystalline silicon terrestrial photovoltaic (PV) modules Design qualification and type approval, International Standard 61215 (Ed. 2), 2005.
17. R.A. Sinton, A. Cuevas, and M. Stuckings, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, in: Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington DC, USA, 1996, pp. 457460.
18. H. Nagel, C. Berge, and A.G. Aberle Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors Journal of Applied Physics 86 11 1999 6218 6221
19. A. Cuevas, G. Giroult-Matlakowski, P.A. Basore, C. DuBois, R.R. King, Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters, in: Proceedings of the First World Conference on Photovoltaic Energy ConversionWCPEC, vol. 2, Waikoloa, Hawaii, USA, 1994, pp. 14461449.
20. D.A. Clugston, P.A. Basore, PC1D version 5: 32 bit solar cell modelling on personal computers, in: Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, California, USA, 1997 pp. 207210.
21. 2 passivation Japanese Journal of Applied Physics 35 8B 1996 L1047 L1049
22. H. Schmidhuber, Verkapselung von kristallinen Silizium-Solarzellen, Dissertation, Gesamthochschule Hagen, 2003.