Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlO x layers

Thin Solid Films

Volumn 522, Issue , 2012, Pages 336-339

  Saint Cast, Pierre ^a   Richter, Armin ^a   Billot, Etienne ^a   Hofmann, Marc ^a   Benick, Jan ^a   Rentsch, Jochen ^a   Preu, Ralf ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Aluminum oxide; Boron emitter; Crystalline silicon; Plasma enhanced chemical vapor deposition; Surface passivation

Indexed keywords

ALUMINUM OXIDES; BORON-DOPED; CRYSTALLINE SILICONS; FERMI-DIRAC STATISTICS; FIRING PROCESS; HIGH RESOLUTION; PASSIVATION LAYER; PLANAR SURFACE; SATURATION CURRENT DENSITIES; SI WAFER; SURFACE DOPING; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SYSTEMATIC STUDY; TEXTURED SURFACE; UPPER LIMITS;

DEPOSITS; OPEN CIRCUIT VOLTAGE; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS;

VAPORS;

EID: 84868593551     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.08.050     Document Type: Conference Paper

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