Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

Nanotechnology

Volumn 24, Issue 3, 2013, Pages

  Wierzbicka, A ^a   Zytkiewicz, Z R ^a   Kret, S ^a   Borysiuk, J ^a   Dluzewski, P ^a   Sobanska, M ^a   Klosek, K ^a   Reszka, A ^a   Tchutchulashvili, G ^a   Cabaj, A ^a   Lusakowska, E ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER; EPITAXIAL ALIGNMENT; EPITAXIAL RELATIONSHIPS; GAN GROWTH; GAN NANOWIRES; IN-PLANE ORIENTATION; LOW TEMPERATURES; NITRIDATION TEMPERATURE; PLANAR LAYERS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SELF-ASSEMBLED; SI (1 1 1); SI(111) SUBSTRATE; SILICON NITRIDE FILM; SUBSTRATE NITRIDATION; SUBSTRATE SURFACE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; NITRIDATION; SILICON;

SUBSTRATES;

EID: 84871560523     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/3/035703     Document Type: Article

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