Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 3, 2011, Pages

  Consonni, V ^a,b   Hanke, M ^a   Knelangen, M ^a   Geelhaar, L ^a   Trampert, A ^a   Riechert, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79551619083     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.035310     Document Type: Article

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