In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

  Hestroffer, K ^a   Leclere, C ^b   Cantelli, V ^a,c   Bougerol, C ^a   Renevier, H ^b   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b MINATEC   (France)

^c Fondation Nanosciences   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; GAN NANOWIRES; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH-ENERGY ELECTRON; IN-SITU; IN-SITU STUDY; NITRIDED; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SELF-ASSEMBLED; SI (1 1 1);

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; NUCLEATION; X RAY DIFFRACTION;

SILICON;

EID: 84861804417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4721521     Document Type: Article

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