Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

Journal of Crystal Growth

Volumn 310, Issue 13, 2008, Pages 3154-3158

  Bertness, K A ^a   Roshko, A ^a   Mansfield, L M ^a   Harvey, T E ^a   Sanford, N A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CATALYST ACTIVITY; CRYSTALLOGRAPHY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; THERMODYNAMIC PROPERTIES;

CATALYTIC SITES; CRYSTALLOGRAPHIC PLANES; SEMICONDUCTOR NANOWIRES; VAPOR-LIQUID-SOLID MECHANISM;

NANOWIRES;

EID: 44549087553     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.033     Document Type: Article

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