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Journal of Crystal Growth

Volumn 289, Issue 1, 2006, Pages 381-386

GaN-nanowhiskers: MBE-growth conditions and optical properties

(7) Meijers, R a Richter, T a Calarco, R a Stoica, T a Bochem, H P a Marso, M a Luth H a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

A1. Growth models; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; TEMPERATURE DISTRIBUTION;

GROWTH MODELS; GROWTH PARAMETERS; NANOSTRUCTURES;

GALLIUM NITRIDE;

EID: 33244456579 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.117 Document Type: Article

Times cited : (94)

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