Initial stage of silicon nitride nucleation on Si(111) by rf plasma-assisted growth

e-Journal of Surface Science and Nanotechnology

Volumn 4, Issue , 2006, Pages 84-89

  Gangopadhyay, Subhashis ^a   Schmidt, Thomas ^a   Falta, Jens ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Low Energy Electron Diffraction; Scanning Tunneling Microscopy; Si(111); Silicon nitride

Indexed keywords

ANNEALING; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; THIN FILMS;

NITROGEN PLASMA SOURCE; SI(111); SURFACE RECONSTRUCTION; VACANCY ISLANDS;

SILICON NITRIDE;

EID: 31044442801     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2006.84     Document Type: Conference Paper

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