Macro-and micro-strain in GaN nanowires on Si(111)

Nanotechnology

Volumn 22, Issue 29, 2011, Pages

  Jenichen, B ^a   Brandt, O ^a   Pfuller C ^a   Dogan, P ^a   Knelangen, M ^a   Trampert, A ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN NANOWIRES; LOW TEMPERATURE PHOTOLUMINESCENCE; MACROSCOPIC SCALE; MICRO-STRAIN; SELF-ORGANIZED; SI (1 1 1); SI(111) SUBSTRATE; STRAIN STATE;

COALESCENCE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

NANOWIRES;

EID: 79960431422     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/29/295714     Document Type: Article

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