Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

Journal of Crystal Growth

Volumn 334, Issue 1, 2011, Pages 177-180

  Mata, Rafael ^a,b   Hestroffer, Karine ^b   Budagosky, Jorge ^a   Cros, Ana ^a   Bougerol, Catherine ^b   Renevier, Hubert ^c   Daudin, Bruno ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c MINATEC   (France)

Author keywords

A1. Nanostructures; A1. Nucleation; A3. Molecular beam epitaxy; B2. Semiconducting IIIV materials

Indexed keywords

DISPERSIONS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; NUCLEATION; SCANNING ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

CRITICAL VALUE; EFFECT OF TEMPERATURE; GAN NANOWIRES; GROWTH OF GAN; HIGH TEMPERATURE; NUCLEATION PROCESS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SEMI CONDUCTING III-V MATERIALS;

GALLIUM NITRIDE;

EID: 80053321681     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.08.015     Document Type: Article

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