N 2-plasma nitridation on Si(111): Its effect on crystalline silicon nitride growth

Surface Science

Volumn 606, Issue 15-16, 2012, Pages

  Wu, Chung Lin ^a   Chen, Wei Sheng ^a   Su, Ying Hung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Epitaxy; N 2 plasma; Scanning tunneling microscopy spectroscopy; Silicon nitride

Indexed keywords

CRYSTALLINE SILICON NITRIDE; HIGH TEMPERATURE; LOW-ACTIVATION ENERGY; PLASMA NITRIDATION; POST-ANNEALING TEMPERATURE; SI (1 1 1); SI(111) SUBSTRATE; STM/STS; TWO-STEP GROWTH; VACUUM-ANNEALING;

ACTIVATION ENERGY; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; NITRIDATION; PLASMAS; SILICON NITRIDE; STOICHIOMETRY; ULTRATHIN FILMS;

SILICON;

EID: 84861874288     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2012.03.004     Document Type: Article

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